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Boron-phosphorus-silicon glass film reflow method

A borophosphosilicate glass and dry reflow technology, which is applied in the field of borophosphosilicate glass film formation, can solve problems such as affecting the process and short circuit, and achieve the effect of shortening the time.

Active Publication Date: 2008-03-26
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, dry reflow is usually used in the industry to complete the reflow process of borophosphosilicate glass films. However, only dry reflow can easily lead to the formation of voids 1 in the borophosphosilicate glass film as shown in Figure 1. The existence of these voids will be lost in subsequent processes It is easy to cause a short circuit
There is also a known technology that only uses wet reflow. The defect of this method will appear on the borophosphosilicate glass film as an abnormal film 2 shown in Figure 1. This film will affect the subsequent manufacturing process.

Method used

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  • Boron-phosphorus-silicon glass film reflow method

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Embodiment Construction

[0010] Put the wafer deposited with borophosphosilicate glass film (BPSG) 3 into the furnace tube, first perform dry reflow (DryReflow), pass nitrogen gas and heat at the same time, the borophosphosilicate glass film 3 is softened and reflowed under the action of nitrogen and temperature , when the temperature rises to the predetermined temperature for 5 minutes to 15 minutes, the nitrogen input is stopped, and the borophosphosilicate glass film 3 is reflowed to form, but due to uneven reflow, some voids are formed in the middle of the borophosphosilicate glass film.

[0011] Then carry out wet reflow (Wet Reflow), keep the temperature constant when feeding nitrogen, and feed hydrogen and oxygen at the same time, hydrogen and oxygen are used as catalysts, and under the effect of high temperature, the inside of the borophosphosilicate glass membrane 3 starts to flow, Simultaneously start infiltration from the upper and lower layers of the borophosphosilicate glass membrane 3, st...

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Abstract

The reflow process for B-P-Si glass (BPSG) includes the following steps: loading chip with deposited BPSG film into furnace, dry reflow to soften the BPSG film, and wet reflow to fill gaps in BPSG film. The reflow process combines dry reflow and wet reflow can obtain high quality BPSG film, and has shortened reflow period and relatively low reflow temperature.

Description

technical field [0001] The invention relates to a method for forming a borophosphosilicate glass film (BPSG), in particular to a method for reflowing the borophosphosilicate glass film. Background technique [0002] As an important interlayer dielectric, borophosphosilicate glass (BPSG) film is widely used in semiconductor integrated circuits. Usually, the wafer deposited with the borophosphosilicate glass film is put into a furnace tube for reflow, and the reflow methods include dry reflow (Dry Reflow) and wet reflow (Wet Reflow). [0003] At present, dry reflow is usually used in the industry to complete the reflow process of borophosphosilicate glass films. However, only dry reflow can easily lead to the formation of voids 1 in the borophosphosilicate glass film as shown in Figure 1. The existence of these voids will be lost in subsequent processes It is easy to cause a short circuit. Another known technique is to only use wet reflow. The defect of this method will appe...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/02
Inventor 常建光周永昌
Owner SEMICON MFG INT (SHANGHAI) CORP