Unlock instant, AI-driven research and patent intelligence for your innovation.
Photoresist composition, its coating method and method of forming photoresist pattern
What is Al technical title?
Al technical title is built by PatSnap Al team. It summarizes the technical point description of the patent document.
A technology of photoresist and coating method, applied in the field of photoresist composition, can solve the problems of difficult application of TFT substrate and the like
Inactive Publication Date: 2012-06-06
MERCK PATENT GMBH +1
View PDF4 Cites 1 Cited by
Summary
Abstract
Description
Claims
Application Information
AI Technical Summary
This helps you quickly interpret patents by identifying the three key elements:
Problems solved by technology
Method used
Benefits of technology
Problems solved by technology
Both vertical stripes and horizontal stripes can be reduced by increasing the film thickness of the photoresist, but it is difficult to apply it to the TFT substrate manufacturing process in recent years that strictly requires control of the amount of photoresist used.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more
Examples
Experimental program
Comparison scheme
Effect test
Embodiment
[0065] Hereinafter, Synthesis Examples, Examples, and Comparative Examples are given to describe the present invention in more detail, but the present invention is not limited by these descriptions.
Synthetic example 1
[0066] Synthesis Example 1 (Synthesis 1 of Surfactant)
[0067] Into a glass flask equipped with a stirring device, a condenser, a thermometer, and a dropping funnel, 133 parts by weight of methyl isobutyl ketone (MIBK) was charged as a polymerization solvent.
[0068] On the other hand, CH as the fluoroalkyl-containing monomer (m1) 2 =CHCOOCH 2 CH 2 C 8 f 17 (m1-1) 33 parts by weight, CH as polyoxypropylene chain-containing monomer (m2) 2 =CCH 3 COO(C 3 h 6 O) nH (the average of n is 5) (m2-1) 67 parts by weight, tert-butylperoxy-2-ethylhexanoate (Perbutyl O manufactured by NOF Corporation, hereinafter referred to as "P-O") as a polymerization initiator ”) 7 parts by weight and 100 parts by weight of MIBK were mixed in advance to form a uniform solution, which was put into a dropping funnel as a dripping liquid.
[0069] The dropping funnel filled with the dripping liquid was set on the above-mentioned glass flask, and the temperature was raised to 110° C. while inje...
Synthetic example 2～9
[0070] Synthesis Examples 2-9 (Synthesis 2-9 of Surfactant)
[0071] Copolymers P-2 to P-9 were synthesized under the same conditions as in Synthesis Example 1 except that the monomer composition and polymerization conditions in the dripping solution in Synthesis Example 1 were changed to the conditions shown in Table 1.
[0072] Table 1 shows not only the composition and polymerization conditions of the copolymer P, but also the weight average molecular weight of the obtained polymer.
[0073] In addition, m2'-1 described in Table 1 is the following monomer.
[0074] CH 2 =CCH 3COO(C 2 h 5 O) nH (the average of n is 8) (m2'-1)
[0075] Table 1
[0076] Synthesis example
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
PUM
Login to View More
Abstract
The invention provides a discharge nozzle system coating method photoresist composition for manufacturing an LCD-TFT substrate that will not form streak spots, or the like, at coating. The discharge nozzle system coating method photoresist composition contains (A) an alkali-soluble resin; (B) a photosensitizing agent, and (C) a fluorochemical surfactant which is a copolymer (P) obtained by copolymerizing a monomer mixture (m), comprising a monomer (m1) containing a fluorinated alkyl group shown by general Expression (1): CH2=CR<1>COOCH2CH2C8F17(R<1> is a hydrogen atom or a methyl group) and a monomer (m2) containing a polyoxypropylene chain shown by general Expression (2): CH2=CR2COO(C3H6O)nH (R<2> is a hydrogen atom or a methyl group, and n is 4 to 7 as an average of the distribution). The mixing ratio (m1) / (m2) of the monomers (m1) and (m2) in the monomer mixture (m) is 25 / 75 to 46 / 60 (ratio by weight), and the weight-average molecular weight of the copolymer (P) is 3,000 to 10,000.
Description
technical field [0001] The present invention relates to a photoresist composition coated by a discharge nozzle coating method, in particular to a discharge nozzle coating method preferentially used in the manufacture of a flat panel display (FPD) represented by a liquid crystal display (LCD). A photoresist composition, a coating method of the photoresist composition, and a resist pattern forming method using the photoresist composition. Background technique [0002] The production of thin-film transistor (TFT) substrates for liquid crystal displays (LCDs) is considered from the viewpoint of increasing the screen size along with the development of television applications and improving productivity due to the increase in the number of chamfers from one mother glass substrate. Upsizing of mother glass substrates is progressing. Conventionally, in the manufacture of a TFT substrate, a photoresist is applied by spin coating or slot spin coating. Spin-coating or slit-spin-coatin...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More
Application Information
Patent Timeline
Application Date:The date an application was filed.
Publication Date:The date a patent or application was officially published.
First Publication Date:The earliest publication date of a patent with the same application number.
Issue Date:Publication date of the patent grant document.
PCT Entry Date:The Entry date of PCT National Phase.
Estimated Expiry Date:The statutory expiry date of a patent right according to the Patent Law, and it is the longest term of protection that the patent right can achieve without the termination of the patent right due to other reasons(Term extension factor has been taken into account ).
Invalid Date:Actual expiry date is based on effective date or publication date of legal transaction data of invalid patent.
Login to View More 
Login to View More