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Synchronized temperature protection for class-ab amplifiers

A technology of integrating amplifiers and amplifier circuits, applied in the layout of amplifier protection circuits, improving amplifiers to reduce temperature/power supply voltage changes, etc., to prevent overheating

Inactive Publication Date: 2008-04-16
NXP BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this solution has the disadvantage that when more amplifiers have high temperatures, the temperature protection is activated at lower temperatures, even if the individual temperature of each amplifier is not a problem at all

Method used

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  • Synchronized temperature protection for class-ab amplifiers
  • Synchronized temperature protection for class-ab amplifiers
  • Synchronized temperature protection for class-ab amplifiers

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Embodiment Construction

[0026] While the invention can be modified into various modifications and alternative forms, details thereof will be shown by way of example in the drawings and will be described in detail. It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. In particular, although the invention is described with reference to an amplifier circuit in which the synchronous circuit of the present invention is implemented, it goes without saying that the synchronous circuit can be used in several other circuits which provide the same advantages. Accordingly, the invention is intended to cover all modifications, equivalents, and alternatives falling within the scope of the invention as defined by the appended claims.

[0027] now refer to figure 1 , which shows an integrated amplifier circuit 10 in which a synchronous circuit according to the invention is implemented. exist figure 1 Among them, the internal control signal is...

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Abstract

The present invention relates to a synchronization circuit for an integrated amplifier provided with a bandwidth control in accordance to a bandwidth control signal, wherein said synchronization circuit comprises a control terminal for a control signal and rank selector means connected to an internal control signal and being configured to emboss said internal control signal to said control terminal, if said internal control signal has a higher rank in accordance to a predetermined ranking criteria in comparison to said control signal. Further, the present invention relates to a respective synchronization method for continuously communicating and synchronizing of a common control signal for multiple circuits. One preferred application of the invention is in temperature protection by a synchronized bandwidth control for multiple class- AB amplifiers by means of only one additional terminal pin per amplifier. In such multi-channel amplifier configuration, the hottest amplifier dictates the amount of bandwidth reduction. By the invention the individual amplifiers can communicate about their individual temperatures, by which the temperature of the actual hottest amplifier and the respective required bandwidth reduction is determined and provided to each individual amplifier for a synchronized bandwidth reduction. Thus, in three channel RGB-amplifiers the signal integrity is advantageously maintained.

Description

technical field [0001] The invention relates to a synchronization circuit for an integrated amplifier according to claim 1 , a synchronization method according to claim 10 , and an electronic device according to claim 14 . Background technique [0002] Amplifiers, especially Class AB amplifiers, have the ability to produce signal output currents that exceed the current flowing in the circuit during quiescent periods. Additionally, the signal output current level increases with signal frequency due to capacitive loading. Therefore, the power dissipation in the output transistor increases with the signal frequency, which in turn increases the temperature of the amplifier due to the self-heating effect of the power dissipation. In other words, power dissipation is the main source for determining the junction temperature of semiconductor components. Another important source is the temperature of the environment in which the amplifier is operated. To prevent excessive junction...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/30H03F1/52
CPCH03F1/52
Inventor 迈克·斯普利托夫保罗·布鲁因
Owner NXP BV