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Semiconductor light emitting device

A technology for light-emitting elements and semiconductors, which is applied to semiconductor devices, electrical components, circuits, etc., and can solve problems such as the reduction of light extraction efficiency of light-emitting elements

Inactive Publication Date: 2008-04-23
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the light extraction efficiency of the light-emitting element as a whole decreases

Method used

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  • Semiconductor light emitting device
  • Semiconductor light emitting device
  • Semiconductor light emitting device

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Experimental program
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Embodiment

[0115] An LED epitaxial wafer is prepared for preparing a red LED having a structure shown in FIG. 1 and a light emission wavelength near 630nm, and making an LED element. Epitaxial growth method, layer thickness of each epitaxial layer, structure and material of each epitaxial layer, structure of reflective metal film layer, structure and size of ohmic contact junction, attachment to support substrate, replacement method, electrode formation method, etching The detailed procedure of the preparation of the method etc. is as follows.

[0116] As shown in FIG. 8, on an n-type GaAs substrate (substrate for growth) 41, n-type (doped with Se) (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P etch stop layer (layer thickness 200nm, carrier concentration 1×10 18 / cm 3 ) (etching stop layer) 42, n-type (doped Se) GaAs contact layer (layer thickness 50nm, carrier concentration 1×10 18 / cm 3 ) (first electrode side contact layer) 3, n-type (doped Se) (Al 0.7 Ga 0.3 ) 0.5 In 0.5 P window layer (l...

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Abstract

The present invention relates to a semiconductor light emitting device provided with a rough surface such that a film thickness of a light extract layer is not reduced. A plurality of semiconductor layers including an active layer 6 and a light extract layer 4 , and a reflective metal film 11 are formed in a semiconductor light emitting device. The light extract layer 4 is formed of a plurality of layers 23, 24 having different composition ratios. An irregularity 22 is formed on the layers 23, 24 including an outermost layer to provide a main surface S as a rough-surface.

Description

technical field [0001] The present invention relates to a semiconductor light emitting element capable of roughening without reducing the layer thickness of the light extraction layer. Background technique [0002] Light-emitting diodes (LEDs), which are semiconductor light-emitting elements, can grow GaN-based or AlGaInP-based high-quality crystals by MOVPE in recent years. Therefore, high-brightness LEDs such as blue, green, orange, yellow, and red can be manufactured. With the high luminance of LEDs, applications such as brake lights of automobiles and backlights of liquid crystal displays have expanded, and demand has increased year by year. [0003] Since high-quality crystals can be grown by the MOVPE method, the luminous efficiency inside the light-emitting element has approached the limit value of the theoretical value. However, it is desired to improve the efficiency of light extraction from the light emitting element to the outside without reducing the efficiency ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/22H01L33/30H01L33/40H01L33/60
Inventor 今野泰一郎新井优洋饭塚和幸
Owner SUMITOMO CHEM CO LTD