Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field

A technology of uniform electric field and large area, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve problems such as affecting the uniformity of potential distribution, and achieve the effect of solving the uniformity of potential distribution

Inactive Publication Date: 2008-05-28
NANKAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the excitation frequency increases when applied to a large-area reaction chamber, the potential standing wave effect and the potential logarithmic singularity of the power feed connection end in a conventional capacitively coupled parallel plate electrode reaction chamber or a reaction chamber using a ladder electrode effect seriously affects the uniformity of the potential distribution

Method used

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  • Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field
  • Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field
  • Large area VHF-PECVD reaction chamber special-shaped electrode capable of obtaining even electric field

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] Schematic diagram of the arc shaped electrode structure (shown in Figure 4).

[0038] In this example, the rectangular parallel plate electrode has a length of L=120cm, a width of W=80cm, and a height of H=10cm. The side four-terminal symmetrical feed-in method is adopted. The centers of the four power feed-in ports are located at the horizontal midline of the long side of the electrode L. The distance between the centers of the ports is 70 cm; an arc-shaped electrode is attached to one side of each port, forming a plane with the rectangular electrode, which is directly opposite to the substrate plane in the reaction chamber. The arc-shaped electrode has a radius of 15 cm, a thickness of 1 cm, and a height of 9 cm. The plane shape of the arc-shaped special-shaped electrode is shown in Figure 5.

[0039] The excitation frequency power supply of 40.68MHz is applied, and the four-terminal equal-phase and equal-amplitude power is fed in. Figure 6 shows the theoretical cal...

Embodiment 2

[0041] Rectangular I special-shaped electrode structure (shown in Figure 7).

[0042]In this example, the rectangular parallel plate electrode has a length of L=120cm, a width of W=80cm, and a height of H=10cm. The side four-terminal symmetrical feed-in method is adopted. The centers of the four power feed-in ports are located at the horizontal midline of the long side of the electrode L. The distance between the centers of the ports is 70cm; a small rectangular electrode is attached to one side of each port, forming a plane with the large-area rectangular electrode, and this plane is directly opposite to the substrate plane in the reaction chamber. The length of the small rectangular electrode is 30cm, the width is 8cm, and the thickness is 1cm, and its long outer edge is less than the length edge of the power electrode. The plane shape of the rectangular I special-shaped electrode is shown in figure 8.

[0043] The excitation frequency power supply of 40.68MHz is applied, a...

Embodiment 3

[0045] Rectangular II special-shaped electrode structure (shown in Figure 10)

[0046] In this example, the rectangular parallel plate electrode has a length of L=120cm, a width of W=80cm, and a height of H=10cm. The side four-terminal symmetrical feed-in method is adopted. The centers of the four power feed-in ports are located at the horizontal midline of the long side of the electrode L. The distance between the centers of the ports is 70cm; a small rectangular electrode is attached to one side of each port, forming a plane with the large-area rectangular electrode, and this plane is directly opposite to the substrate plane in the reaction chamber. The small rectangular electrode has a length of 40 cm, a width of 8.5 cm, and a thickness of 1 cm, and its long outer edge overlaps the length edge of the power electrode. The plane shape of the rectangular II special-shaped electrode is shown in Fig. 11 .

[0047] The excitation frequency power supply of 40.68MHz is applied, an...

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Abstract

The invention discloses a special-shaped electrode capable of achieving large-area reaction chamber of VHF-PECVD with uniform electric fields. A power electrode plate of the invention is provided with a corresponding additional electrode plate at the position near a power feed-in port, the corresponding additional electrode plate is parallel with the horizontal surface of the power electrode plate of which the thickness is larger than the thickness of the additional electrode plate which is connected to the edge of a power electrode surface of the power electrode plate. The special-shaped electrode of the invention is capable of being employed in reaction chambers of PECVD of arbitrary excitation frequency and arbitrary area, which can change current distribution on the electrode surface by using the additional electrode of the electrode power feed-in port, thereby being capable of suppressing logarithm singular point effect of electric potential near the electrode feel-in port.

Description

【Technical field】 [0001] The invention relates to the technical field of a thin film transistor matrix in the field of silicon thin film solar cells and flat panel displays, in particular to a large-area VHF-PECVD reaction chamber shaped electrode capable of obtaining a uniform electric field. 【Background technique】 [0002] In recent years, it has been reported that the application of very high frequency (VHF) technology to PECVD can increase the deposition rate of thin films, and the research results show that VHF-PECVD is completely suitable for high-speed deposition of microcrystalline silicon thin films and amorphous silicon thin films. However, the application research of VHF-PECVD is usually carried out in small-scale PECVD reaction chambers, so it cannot be directly applied to large-scale industrial production. Radio frequency capacitively coupled parallel plate electrode reaction chambers are widely used for plasma-enhanced chemical vapor deposition or film etching ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/505
Inventor 赵颖张晓丹葛洪薛俊明任慧志许盛之张建军魏长春侯国付耿新华熊绍珍
Owner NANKAI UNIV
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