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Semiconductor device and manufacturing method thereof

A semiconductor and device technology, applied in the field of semiconductor devices, can solve the problems of increasing the number of steps, increasing production costs and manufacturing time, etc.

Inactive Publication Date: 2008-08-13
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these separate processes increase the number of steps and thus increase production cost and manufacturing time

Method used

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Experimental program
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Effect test

Embodiment Construction

[0025] Embodiments of the present invention will be described in detail with reference to the drawings.

[0026] Referring to FIG. 1A, a plurality of word lines (WL) and select lines (SL) are formed on a cell region of a semiconductor substrate 100, and gate lines (GL) are formed on a peripheral region. Here, the selection lines include source selection lines and drain selection lines. The word line (WL) and the selection line (SL) include a tunnel insulating film 102 a , a floating gate 104 , a dielectric film 106 and a control gate 108 . A hard mask is formed over the control gate 108 . In addition, a contact hole is formed on the dielectric film 106 included on the selection line (SL), and the floating gate 104 is electrically connected to the control gate 108 through the contact hole on the selection line (SL). Meanwhile, the gate insulating film 102b, the floating gate 104, the dielectric film 106, and the control gate 108 are included in a gate line (GL) formed on the ...

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PUM

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Abstract

A semiconductor device includes a gate pattern formed over a semiconductor substrate, the substrate defining a cell region and a peripheral region. First and second contact plugs are formed in the cell region. Third and fourth contact plugs are formed in the peripheral region. A first separation structure is formed in the cell region and covers the first contact plug. A second separation structures are formed in the peripheral region and define first and second openings, the first opening exposing an upper portion of the third contact plug, the second opening exposing an upper portion of the fourth contact plug. First, second, and third metal wire sections are formed over the first, second, third, and fourth contact plugs. The first metal wire section is formed in the cell region and contacts the second contact plug. The second metal wire section is formed in the peripheral region and contacts the third contact plug. The third metal wire section is formed in the peripheral region and contacts the fourth contact plug. The first separation structure electrically isolates the first contact plug from the first metal section.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2007-013669 filed on February 9, 2007, which is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device, and more particularly to a manufacturing method wherein a contact plug is formed on a cell region and a contact plug is formed on a peripheral region substantially simultaneously, the number of process steps is reduced, and an isolation film is formed to isolate a source contact plug and subsequent metal lines, reducing the height of the semiconductor device. Background technique [0004] A semiconductor flash memory device includes a plurality of memory cells, selection transistors, and high voltage transistors. A common flash memory device is configured as a string in which a plurality of memory cells are arranged in parallel to each other, and on both ends of the strin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/522H01L21/768H10B69/00
CPCH01L27/105H01L21/823475H01L27/1052H01L21/28H01L21/18
Inventor 辛容撤
Owner SK HYNIX INC