Etchant for thin film transistor liquid crystal display device

A technology of composition and etching solution, which is applied in the direction of surface etching composition, semiconductor/solid-state device manufacturing, electrical components, etc., to achieve the effects of reducing costs, maintaining performance, and guaranteeing margins

Active Publication Date: 2008-09-17
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

This patented method uses specific chemicals called Hydroxylamine (HAA) instead of traditional strong oxidizing agents like oxygen or chlorinated solvents which are harmful substances. These methods have several benefits over conventional techniques including faster processing times without adding extra materials costly, stable solutions even when exposed repeatedly during use, improved quality control compared to older technologies, reduced waste from excessive usage of these reagents, etcetera.

Problems solved by technology

LC displays require smaller sizes while maintaining brightness levels. To achieve this, the thickness of certain components needs to decrease without compromising performance. Current processes involve depositing metals onto insulating layers during fabricating panels by evaporation deposition techniques like sputtering or chemical vapor phase growth. These techniques result in increased costs compared to traditional ways involving ion implants. Additionally, current etch procedures often lead to issues related to residual stress caused by impurities present within the coatings themselves.

Method used

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  • Etchant for thin film transistor liquid crystal display device
  • Etchant for thin film transistor liquid crystal display device
  • Etchant for thin film transistor liquid crystal display device

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Embodiment Construction

[0027] The invention provides an etching solution composed of ammonium persulfate, an azole compound and water corresponding to the remainder.

[0028] In the present invention, although water is not specifically mentioned, in all etching liquids, the remainder of the weight % of components other than water to 100% is water. As the water used in the etching solution of the present invention, it is preferable to use semiconductor-grade water or ultrapure water.

[0029] Etching solution composition

[0030] The ammonium persulfate of the present invention is an oxidizing agent and is a main component for etching a copper-containing metal layer. As ammonium persulfate, one having a purity for semiconductor engineering can be preferably used. In the etching solution of the present invention, ammonium persulfate accounts for 0.1% to 50% in weight ratio to the etching solution.

[0031] In the present invention, the azole compound is a 5-membered heterocyclic ring containing nit...

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PUM

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Abstract

The invention relates to an etchant composition of a film transistor liquid crystal display. The invention provides an excellent etchant for ensuring high stability and engineering margin that can process cone angle etching evenly to metal containing copper. The invention relates to the etchant composition to etch copper distribution line used in circuit pattern of the liquid crystal display. The etchant composition contains ammonium persulfate and azole series composition. The etchant composition contains no peroxide, so stability and engineering margin can be ensured, and has perfect characteristic of cone angle etching contour.

Description

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Claims

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Application Information

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Owner DONGJIN SEMICHEM CO LTD
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