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Semiconductor device generating voltage for temperature compensation

A semiconductor and voltage technology, applied in the direction of adjusting electrical variables, static memory, instruments, etc., can solve problems such as the change of output voltage temperature characteristics, and achieve the effect of simplifying the circuit structure

Inactive Publication Date: 2008-10-01
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this structure, the temperature characteristic of the output voltage changes depending on the voltage division ratio
[0016] In addition, the configurations described in Patent Documents 7 and 8 are not designed to respond to the temperature characteristics of the output voltage supply destination.

Method used

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  • Semiconductor device generating voltage for temperature compensation
  • Semiconductor device generating voltage for temperature compensation
  • Semiconductor device generating voltage for temperature compensation

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0044] FIG. 1 is a functional block diagram showing the configuration of a semiconductor device 301 according to the first embodiment of the present invention.

[0045] Referring to FIG. 1 , semiconductor device 301 includes temperature compensation voltage generation circuit 51 , comparison target voltage generation circuit 3 , output voltage generation circuit 4 , reference voltage generation circuit 5 , decoder 6 , and memory cell array 7 .

[0046] The temperature compensation voltage generation circuit 51 generates a temperature compensation voltage VT whose voltage value changes according to the ambient temperature as an external factor, based on the reference input voltage VREFIN received from the reference voltage generation circuit 5 .

[0047] The output voltage generation circuit 4 compares the temperature compensation voltage VT received from the temperature compensation voltage generation circuit 51 with the comparison object voltage VCOMP received from the compari...

no. 2 approach

[0074] Compared with the temperature compensation voltage generation circuit of the first embodiment, the present embodiment relates to a temperature compensation voltage generation circuit in which the number of transistors included in the output transistor unit is increased. Except for the content described below, it is the same as the temperature compensation voltage generating circuit of the first embodiment.

[0075] Figure 5 It is a circuit diagram showing the configuration of the temperature compensation voltage generating circuit 52 according to the second embodiment of the present invention.

[0076] refer to Figure 5 Compared with the temperature compensation voltage generation circuit according to the first embodiment of the present invention, the temperature compensation voltage generation circuit 52 includes an output transistor unit 22 instead of the output transistor unit 12 . The output transistor unit 22 includes N-channel MOS transistors M11 to M13.

[0...

no. 3 approach

[0086] Compared with the temperature compensation voltage generation circuit of the first embodiment, this embodiment relates to a temperature compensation voltage generation circuit in which the magnitude relationship between the number of transistors included in the input transistor unit and the number of transistors included in the output transistor unit is reversed. . Except for the content described below, it is the same as the temperature compensation voltage generating circuit of the first embodiment.

[0087] Figure 6 It is a circuit diagram showing the configuration of the temperature compensation voltage generation circuit 53 according to the third embodiment of the present invention.

[0088] refer to Figure 6 , compared with the temperature compensation voltage generation circuit according to the first embodiment of the present invention, the temperature compensation voltage generation circuit 53 includes an input transistor unit 31 instead of the input transis...

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PUM

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Abstract

An input transistor unit includes a first transistor having a control electrode to which a reference voltage is supplied. An output transistor unit includes a diode-connected second transistor. At least one of the input transistor unit and the output transistor unit further includes a third transistor that is diode-connected and connected in series with the corresponding first transistor or the second transistor and outputs a current in the same direction as the corresponding transistor does. The number of transistors included in the input transistor unit and the number of transistors included in output transistor unit are different from each other. The size of transistors included in the input transistor unit differs from that of transistors included in the output transistor unit.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly to a semiconductor device that generates a voltage for temperature compensation. Background technique [0002] A flash memory having a circuit for generating voltages different from an external voltage as write voltages, read voltages, and erase voltages for memory cells is being developed. [0003] In general, the characteristics of a memory cell change with temperature. Therefore, in such a flash memory, it is necessary to change the write voltage, read voltage, and erase voltage of the memory cell according to the temperature characteristic of the memory cell, that is, perform temperature compensation. . Such a circuit for performing temperature compensation includes, for example, a temperature compensation voltage generation circuit that generates an output voltage in which a reference input voltage has a temperature characteristic. Such a temperature compensation volt...

Claims

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Application Information

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IPC IPC(8): G05F3/22G05F3/02G11C16/30
Inventor 伊藤孝桐木成章山内忠昭小野峰和长泽勉久下英比古
Owner RENESAS ELECTRONICS CORP