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Dynamic phase-change memory

A phase-change memory and memory technology, which is applied in the direction of static memory, read-only memory, digital memory information, etc., can solve problems such as occupation, and achieve broad application prospects, low power consumption, and improved fatigue characteristics

Active Publication Date: 2011-06-01
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] As a model of search engine, Google has created the miracle of Internet technology. In these similar search engines, the search of data is mainly to read the database. During the search process, the computer requires a lot of power consumption to generate huge electricity bills The expenditure has become one of the most important costs for search engine companies, and most of these power consumption comes from the work of memory, especially the consumption of DRAM: because there are constantly requests to read database information to complete the search task, and among them , the power consumption required by the continuous refreshing of DRAM occupies most of the total power consumption

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Embodiment Construction

[0022] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0023] The purpose of the present invention is to provide a new type of memory—dynamic phase change memory, which utilizes the reversible change between high resistance and low resistance of phase change material to realize data storage. The difference between the dynamic phase change memory and the traditional phase change memory is that the dynamic phase change memory uses a phase change material with a lower melting point as the storage medium, therefore, it only needs to provide a weaker electric current during the RESET (amorphization) process. signal, the programming operation of the device can be realized. A phase change material with a lower melting point generally has a lower crystallization temperature, and a storage medium with a lower crystallization temperature makes it easier to crystallize at ambient temperature, resulting in a...

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Abstract

The invention discloses a dynamic phase transition memory. A storage medium of the memory adopts a phase-change material with lower melting point and lower crystallizing temperature; the melting point of the phase-change material is between 200 DEG C and 640 DEG C, and the crystallizing temperature thereof is between 40 DEG C and 120 DEG C. The memory also comprises a regular refreshing module used for carrying out data refreshing for a memory unit storing high resistance condition regularly, and resetting the memory unit storing lower resistance to the memory unit storing the high resistancecondition. The memory carries out programming to a component with lower power consumption. The dynamic phase transition memory provided by the invention causes the dynamic random memory component to greatly reduce the number of times of needed refreshing, and has lower power consumption compared with the traditional PCRAM; simultaneously as the small signal is adopted to carry out programming, the fatigue character of the dynamic phase transition memory is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor storage and relates to a storage, in particular to a low-power dynamic phase-change storage. Background technique [0002] Semiconductor memory is the foundation of information technology and has a market worth hundreds of billions of dollars worldwide. As the most promising candidate for the next-generation general-purpose non-volatile semiconductor memory, phase-change memory (PCRAM) has received extensive attention, and it will soon partially replace flash memory (Flash), thus becoming one of the most important semiconductor memories. [0003] However, the disadvantage of PCRAM is its relatively high programming power consumption, because during the RESET process (transition from low resistance to high resistance, that is, from polycrystalline to amorphous), the memory needs to pass through a large power consumption electrical pulse The phase-change material in the memory is heated above...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/02
Inventor 张挺宋志棠刘波封松林陈邦明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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