Organic resistive random access memory and preparation method thereof

A resistive memory, organic technology, applied in the field of memory, can solve problems such as poor chemical stability and thermal stability, and achieve the effects of excellent mechanical properties, good thermal stability, and stable resistive characteristics

Inactive Publication Date: 2013-07-24
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Moreover, most organic materials show problems such as poor chemical stability and thermal stability.

Method used

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  • Organic resistive random access memory and preparation method thereof
  • Organic resistive random access memory and preparation method thereof
  • Organic resistive random access memory and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] use figure 1 The array memory structure shown is used to prepare an organic resistive variable memory, which includes a substrate material 1 , a lower electrode 2 , an organic resistive variable layer 3 and an upper electrode 4 from bottom to top.

[0033] Its preparation method is:

[0034] (1) Use glass as the substrate, ultrasonically clean it with deionized water, acetone and alcohol, and dry it with hot air for later use;

[0035] (2) The substrate is prepared with a strip-shaped metal Al lower electrode by evaporation process, with a line width of 80 μm and a thickness of 150 nm;

[0036] (3) Preparation of organic resistive layer:

[0037] Dissolve PEI in chloroform, then drop the PEI solution into MMA, and stir evenly, add 1wt% initiator BPO (benzoyl peroxide) or AIBN (azobisisobutyronitrile), heat up to 75 Stir at ~85°C for 3 hours, then raise the temperature to 125°C and stir for 30 minutes to obtain a blend solution of PMMA prepolymer and PEI, add chloro...

Embodiment 2

[0042] use figure 1 In the array storage structure shown, the strip-shaped metal Ag lower electrode is prepared by evaporation process on the glass substrate, with a line width of 80 μm and a thickness of 80 nm. Dissolve PEI in chloroform, then drop PEI solution into MMA, and stir evenly, add 1wt% initiator BPO (benzoyl peroxide) or AIBN (azobisisobutyronitrile), heat up to 75 Stir at ~85°C for 3 hours, then raise the temperature to 125°C and stir for 30 minutes to obtain a blend solution of PMMA prepolymer and PEI, add chloroform for dilution, and synthesize a molecular level blend. The above solution was spin-coated and deposited on the bottom electrode prepared with the bottom electrode, and then placed in a vacuum oven at 120° C. for curing reaction for 20 minutes to form an organic resistive film with a thickness of about 140 nm. Finally, strip-shaped metal Ag was evaporated on the surface of the organic film superior The electrode has a line width of 80 μm and a thi...

Embodiment 3

[0045] Use PET as the substrate, ultrasonically clean with deionized water, dry with hot air, and then treat the surface with ultraviolet ozone. The substrate is prepared with a strip-shaped metal Ag lower electrode by an evaporation process, with a line width of 80 μm and a thickness of 80 nm. Dissolve PEI in chloroform, then drop the PEI solution into MMA, and stir evenly, add 1wt% initiator BPO (benzoyl peroxide) or AIBN (azobisisobutyronitrile), heat up to 75 Stir at ~85°C for 3 hours, then raise the temperature to 125°C and stir for 30 minutes to obtain a blend solution of PMMA prepolymer and PEI, add chloroform for dilution, and synthesize a molecular level blend. The above solution was spin-coated and deposited on the bottom electrode prepared with the bottom electrode, and then placed in a vacuum oven at 120° C. for curing reaction for 20 minutes to form an organic resistive film with a thickness of about 140 nm. Finally, strip-shaped metal Al is evaporated on the sur...

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PUM

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Abstract

The invention provides an organic resistive random access memory and a preparation method thereof. The memory comprises a substrate, bottom electrodes, resistive change layers and top electrodes which are overlapped and connected from bottom to top. The memory is characterized in that the storage structure is an array structure; and an organic resistive change transition material of the resistive change layer is a blend of polymethyl methacrylate (PMMA) and polyetherimide (PEI). In preparation, firstly, the strip bottom electrodes are prepared on the substrate, then the organic resistive change layer films are coated on the strip bottom electrodes, and after low-temperature setting, the crossed strip electrodes are prepared on the surfaces of the resistive change layer films to form the array storage structure. According to the invention, the organic resistive random access memory has the advantages of high switch ratio, stable memory property, extremely small switch current, and relatively low preparation temperature.

Description

technical field [0001] The invention belongs to the technical field of memory, and in particular relates to an organic resistive variable memory and a preparation method thereof. Background technique [0002] With the vigorous development of information technology, all kinds of consumer electronic products are developing rapidly. The volume of electronic products is developing towards miniaturization, while the demand for storage capacity is developing towards the direction of large capacity. At present, Flash memory is the main memory, but the development of Flash memory based on the charge storage mechanism is limited as the size of the device continues to shrink. As the thickness of the tunneling layer decreases, the charge leakage will become more and more serious, which will directly affect the performance of the Flash memory. With the development of the traditional memory cell structure approaching the limit of physical size, a variety of new non-volatile memories ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/40H01L51/05
Inventor 许积文王华何玉汝戴培邦
Owner GUILIN UNIV OF ELECTRONIC TECH
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