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Plasma cvd apparatus and film deposition method

A plasma and gas introduction technology, which is used in the fields of plasma, semiconductor/solid-state device manufacturing, gaseous chemical plating, etc., and can solve the problems of uneven film formation, difficult substrate airflow, and the technology cannot meet the requirements.

Inactive Publication Date: 2011-10-19
KOICHI IND PROMOTION CENT +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the temperature in the reaction tank is different, the temperature of the gas in the plasma will be uneven, so the partial pressure of each active species will be uneven for different parts, and there is a risk of uneven film formation.
[0013] As mentioned above, the plasma CVD apparatus in Japanese Patent No. 2628404 is a thermal plasma CVD apparatus that generates thermal plasma by heating a susceptor with a heater. Difficult to generate uniform airflow to the substrate when placing the electrodes
[0014] In addition, the plasma CVD apparatus disclosed in Japanese Patent Application Laid-Open No. 1-94615 may cause obstacles during film formation, and at the same time, there is also a risk of uneven film formation, which is technically unsatisfactory.
[0015] In addition, the uniformity of the gas supplied to the substrate by the plasma CVD apparatus of "DIAMOND SYNTHESIS BY HIGH GRAVITY D.C.PLASMA CVD (HGCVD) WITH ACTIVE CONTROL OF THE SUBSTRATE TEMPERATURE" is insufficient

Method used

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  • Plasma cvd apparatus and film deposition method
  • Plasma cvd apparatus and film deposition method
  • Plasma cvd apparatus and film deposition method

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no. 1 Embodiment approach

[0081] figure 1 It is a schematic configuration diagram of the plasma CVD apparatus according to the first embodiment of the present invention.

[0082] This DC plasma CVD apparatus is an apparatus for forming a film on the surface of a substrate 1 to be processed, and has a chamber 10 as a reaction chamber. The chamber 10 isolates the substrate 1 from outside air.

[0083] In the chamber 10, a cylindrical steel support 11 is provided, and a disc-shaped anode 11a with good thermal conductivity and high melting point such as molybdenum or graphite is placed on the upper part of the support 11 . The anode 11a has a diameter of, for example, 80 mm and a thickness of 20 mm. The substrate 1 has a rectangular shape and is fixed on the upper mounting surface of the anode 11a. The holder 11 is set to rotate about the axis 11x together with the anode 11a.

[0084] The support 11 on the lower side of the anode 11a is provided with a closed space 11b, and a cooling member 12 is prov...

no. 2 Embodiment approach

[0127] Figure 5A , Figure 5B is a configuration diagram of a plasma CVD apparatus according to a second embodiment of the present invention, and figure 1 The same symbols are used for the same features in .

[0128] The DC plasma CVD device will figure 1 The cathode 13 of the direct current plasma CVD apparatus is changed to a cathode 27 , and the voltage setting unit 21 is changed to a voltage setting unit 28 .

[0129] The cathode 27 has: a central electrode 27a facing the central portion of the anode 11a, a disc-shaped central electrode 27a facing the central portion of the anode 11a, and a ring-shaped (refer to Figure 5B ) and the central electrode 27a is concentric, and the peripheral electrode 27b facing the peripheral portion of the anode 11a, and the insulating portion 27c of ceramics or the like filled seamlessly between the central electrode 27a and the peripheral electrode 27b.

[0130] If the insulating portion 27c is not inserted between the central elect...

no. 3 Embodiment approach

[0138] An example of the structure of the DC plasma CVD apparatus according to the third embodiment of the present invention is as follows: Figure 6 shown. and also, Figure 6 neutralize figure 1 The same reference numerals are used for the same elements in the DC plasma CVD apparatus of the first embodiment.

[0139] This DC plasma CVD apparatus is provided with a chamber 30 as a reaction tank. The chamber 30 isolates the substrate 1 from outside air.

[0140] In the chamber 30, a cylindrical steel holder 11 is provided, and a disk-shaped anode 11a made of, for example, molybdenum or graphite with good thermal conductivity and a high melting point is placed on the upper part of the holder 11 . The substrate 1 has a rectangular shape and is fixed on the upper mounting surface of the anode 11a. The holder 11 is provided to rotate about the axis 11x together with the anode 11a.

[0141] The bracket 11 on the lower side of the anode 11a is designed with a closed space 11b...

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Abstract

A plasma CVD apparatus includes a first electrode which is disposed in a reacting furnace and on which a substrate is mounted, a second electrode that is disposed above and opposite the first electrode and generates plasma with the first electrode, and a first gas supply nozzle that is disposed at a height between a height of the first electrode in the reacting furnace and a height of the second electrode, and has a plurality of ejection ports formed and arranged in such a way as to surround an area between the first electrode and the second electrode where plasma is generated.

Description

technical field [0001] The invention relates to a plasma CVD device and a film forming method. Background technique [0002] In a CVD apparatus that forms a film on a substrate by chemical vapor deposition (Chemical Vapor Deposition: CVD), the matrix gas and the reaction gas as the raw material gas are introduced into the reaction tank, and the exhaust velocity Balance to keep the pressure in the reaction tank constant. In a plasma CVD apparatus that generates plasma, gas turbulence occurs in a reaction tank due to locally high gas temperature. [0003] It is known that the gas containing the reaction gas is expected to flow slowly and uniformly to the surface of the substrate on which the film deposited due to the gas reaction is deposited. If the flow rate is too fast, it will cause uneven film formation, such as the vector of the movement direction of the reaction gas. towards the substrate, the deposition rate of the film will be slower. [0004] Among the existing pl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205H05H1/46C23C16/44C23C16/513
Inventor 西村一仁笹冈秀纪
Owner KOICHI IND PROMOTION CENT