Unlock instant, AI-driven research and patent intelligence for your innovation.

Solid state imaging device and manufacturing method thereof

A technology of solid-state imaging devices and manufacturing methods, which is applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as weak bonding, and achieve the effect of improving productivity

Inactive Publication Date: 2008-12-17
FUJIFILM CORP
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there is the problem that heat-curing adhesives require heat to achieve cure
Because the thermal expansion coefficient is different between the image sensor chip and the cover glass, the bonding between the image sensor chip and the spacer and between the spacer and the cover glass may become weak due to the difference in thermal expansion when heated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid state imaging device and manufacturing method thereof
  • Solid state imaging device and manufacturing method thereof
  • Solid state imaging device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] The structure of the solid-state imaging device of the present invention will be described below. Such as figure 1 and figure 2 As shown, the solid-state imaging device 2 includes: an image sensor chip 4 having a light receiving portion 3 disposed on its upper surface; a frame-shaped spacer 5 attached to the upper surface of the image sensor chip 4 for surrounding the light receiving portion 3; a transparent cover glass 6 attached to the spacer 5 for sealing the light receiving portion 3; and an infrared ray cutting filter 7 (as an optical sheet) attached to the cover glass 6 for cutting infrared light.

[0034]The image sensor chip 4 is formed by dividing a silicon single wafer into rectangular pieces. On the upper surface of the image sensor chip 4, there is a light receiving portion 3 performing photoelectric conversion at the center, and a plurality of pads 10 connected to a mounting board or the like by wires at two opposite side ends. For example, the image se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

To a transparent substrate (20) on which a plurality of spacers (5) are formed, an infrared cut filter (IRCF) substrate (27) is attached. The IRCF substrate (27) has a coefficient of thermal expansion smaller than the transparent substrate (20) and approximately equal to a wafer (31). Next, the transparent substrate (20) is diced into plural pieces to form a plurality of cover glasses (6). Then heat cure adhesive (32) is coated on each spacer (5) and the spacers (5) are attached on the wafer (31) on which a plurality of light receiving section (3) and pads (10) are previously formed. Finally, the heat cure adhesive (32) is heated to be cured.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a manufacturing method thereof, and more particularly to a chip size package type solid-state imaging device and a manufacturing method thereof. Background technique [0002] In order to reduce the size of digital cameras, mobile phones, and the like, it is necessary to reduce the size of incorporated solid-state imaging devices. A conventional solid-state imaging device is formed such that an image sensor chip having a light receiving portion is contained in a hermetically sealed package such as a ceramic package. However, recently, CSP (Chip Scale Package) type solid-state imaging devices are widely used. The CSP type solid-state imaging device is formed such that a spacer is first introduced to surround the periphery of the light receiving portion on the image sensor chip, and then a transparent cover glass is attached to the spacer to hermetically seal the light receiving portion. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/14H04N5/335H04N5/374H04N5/3745
Inventor 山本清文
Owner FUJIFILM CORP