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Novel non-volatilization dynamic memory and memory operation method thereof

A memory and dynamic random technology, applied in the field of microelectronics, can solve the problem of long time consumption

Inactive Publication Date: 2008-12-24
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] And we noticed that the write operation takes longer than the read operation

Method used

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  • Novel non-volatilization dynamic memory and memory operation method thereof
  • Novel non-volatilization dynamic memory and memory operation method thereof
  • Novel non-volatilization dynamic memory and memory operation method thereof

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Embodiment Construction

[0021] The invention is described more fully hereinafter in reference to the examples illustrated in the illustrations, providing preferred embodiments but should not be considered limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the relevant art.

[0022] Where the referenced figures are schematic illustrations of idealized embodiments of the invention, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures.

[0023] The invention relates to an embedded phase-change memory structure, which is characterized in that it has independent read and write decoders, so that it can simultaneously perform read operations on another unit while writing to one unit.

[0024] 1 to 3 of the accompanying drawings have already been described in the backgr...

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Abstract

The invention pertains to the technical field of integrated circuits, in particular to a novel dual-port dynamic random access memory and a memory operation method. The memory is characterized by comprising a plurality of word lines, a plurality of bit lines and a plurality of memory units with every memory unit positioned between the transposition section of every two word lines and two bit lines. Every memory unit comprises a phase-change memory unit, two gate tubes, one word writing line, one word reading line, one bit writing line and one bit reading line; wherein, the first gate tube is connected with the word reading lines and the bit reading lines and the second gate tube is connected with the word reading lines and the bit reading lines. The phase-change memory can have the functions of saving operation time and improving writing and reading efficiency.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a dual-port phase-change random access memory and an operation method thereof. Background technique [0002] The basic storage unit of phase-change memory is a storage device using phase-change materials. Phase change materials refer to materials that can be electrically switched between generally amorphous and generally crystalline states, and typical materials suitable for such applications include various chalcogen compounds. By applying a certain value of continuous electrical excitation on the device, the phase change material will change between crystalline and amorphous states due to temperature changes. Such as figure 1 As shown, phase-change materials in crystalline and amorphous states have quite different I / V characteristics, and according to this characteristic, the states of phase-change material memory can be distinguished into "0" and "1" dur...

Claims

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Application Information

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IPC IPC(8): G11C11/56G11C16/02G11C16/06
CPCG11C8/16G11C13/0004
Inventor 林殷茵胡倍源张佶薛晓勇吴雨欣廖高宏徐乐
Owner FUDAN UNIV