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Thin-film transistor substrate and thin-film transistor for display panel as well as preparation method thereof

A technology for thin film transistors and substrates, which is applied in the manufacturing of transistors, semiconductor/solid-state devices, and electric solid-state devices, etc., can solve the problems of increasing light leakage current and affecting the normal operation of thin film transistors 10, and achieve the effect of reducing the problem of light leakage current.

Active Publication Date: 2010-06-02
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However if figure 1 As shown, since the channel region 12 of the existing thin film transistor 10 is completely exposed to the illumination of the backlight or the external light source, the light leakage current will increase and affect the normal operation of the thin film transistor 10.

Method used

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  • Thin-film transistor substrate and thin-film transistor for display panel as well as preparation method thereof
  • Thin-film transistor substrate and thin-film transistor for display panel as well as preparation method thereof
  • Thin-film transistor substrate and thin-film transistor for display panel as well as preparation method thereof

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Embodiment Construction

[0050] The technical solutions of the present invention will be further described in more detail in conjunction with the accompanying drawings and specific embodiments.

[0051] Please refer to Figure 2 to Figure 5 . Figure 2 to Figure 5 It is a schematic diagram of a method for manufacturing a thin film transistor of a display panel according to a preferred embodiment of the present invention, wherein the display panel of this embodiment is a liquid crystal display panel, but not limited thereto. Such as figure 2As shown in the figure, a transparent substrate 30 is firstly provided, wherein the transparent substrate 30 is used as a thin film transistor substrate of a liquid crystal display panel, which can be a substrate made of transparent materials such as a glass substrate, a quartz substrate or a plastic substrate. Then a patterned light absorbing layer 32 is formed on the transparent substrate 30 . The patterned light absorbing layer 32 may include a silicon-rich d...

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Abstract

The invention discloses a thin film transistor, which is formed on a transparent base plate. The thin film transistor comprises a patterned semiconductor layer, a grid insulating layer positioned on the patterned semiconductor layer, a grid positioned on the grid insulating layer, and a patterned light absorption layer. The patterned semiconductor layer comprises a channel area, and a source electrode area and a drain electrode which are respectively positioned in the patterned semiconductor layer on both sides of the channel area. The patterned light absorption layer is positioned between thetransparent base plate and patterned semiconductor layer.

Description

technical field [0001] The invention relates to a thin film transistor substrate of a display panel, a thin film transistor and a manufacturing method thereof, in particular to a thin film transistor capable of suppressing light leakage current and a manufacturing method thereof. Background technique [0002] Please refer to figure 1 . figure 1 It is a schematic diagram of a thin film transistor of a conventional liquid crystal display panel. Such as figure 1 As shown, the conventional thin film transistor 10 is formed above the thin film transistor substrate 1 of the liquid crystal display panel. The thin film transistor 10 includes a semiconductor layer, a gate insulating layer 18 on the semiconductor layer, and a gate 20 on the gate insulating layer 18 . The semiconductor layer includes a channel region 12 , and a source region 14 and a drain region 16 respectively located on two sides of the channel region 12 . [0003] Since the liquid crystal display panel is a no...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/12H01L21/336G02F1/1362G02F1/1368
Inventor 卓恩宗胡晋玮孙铭伟赵志伟彭佳添林昆志
Owner AU OPTRONICS CORP
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