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Semiconductor device and method for manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as device characteristic correction unbalance

Inactive Publication Date: 2011-02-09
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will lead to an unbalanced correction of negative channel MOS (NMOS) and positive channel MOS (PMOS) device characteristics

Method used

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  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same
  • Semiconductor device and method for manufacturing the same

Examples

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Embodiment Construction

[0014] The various aspects outlined above can be implemented in a variety of ways. The following description is illustrated by various examples of implementing these aspects. It is to be understood that other examples may be utilized and structural and functional changes may be made without departing from the scope of the present invention.

[0015] Reference herein to two or more elements being "coupled" or "connected" to each other is meant to broadly include, unless expressly stated otherwise, that (a) the elements are directly connected to, or in direct communication with, each other without intervening elements, and (b) The elements are indirectly connected to, or in communication with, each other through one or more intervening elements. Furthermore, it should be appreciated that functional blocks or units shown in the figures may be implemented in separate circuits in some embodiments, but may also be fully or partially implemented in common circuits in other embodimen...

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Abstract

A semiconductor device and method of manufacturing thereof. The semiconductor device has at least one NMOS device and at least one PMOS device provided on a substrate. An electron channel of the NMOS device is aligned with a first direction. A hole channel of the PMOS device is aligned with a different second direction that forms an acute angle with respect to the first direction.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] According to planar complementary metal oxide semiconductor (complementary MOS, or CMOS) technology, complementary carrier type field effect transistors are formed on a semiconductor substrate, for example a bulk silicon substrate with a {100} type surface orientation. In the manufacturing process of such a semiconductor device, an electron channel or a hole channel is formed by patterning a functional layer formed on a semiconductor substrate, such as a doped semiconductor material layer, a metal layer or an oxide layer. The patterned structure is generally aligned with a specific crystallographic orientation of the semiconductor substrate, which is marked by flats or notches around the semiconductor wafer. [0003] As the lateral feature size of semiconductor structures decreases, especially in sub-quarter-micron technologies...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092
CPCH01L27/1104H01L21/823807H01L27/0207H10B10/12
Inventor A·休伯W·坎普M·奥斯特迈尔
Owner INFINEON TECH AG