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Soft program method in a non-volatile memory device

A non-volatile storage and soft programming technology, applied in the field of soft programming in non-volatile memory devices, can solve problems such as the widening of the distribution of threshold voltages

Inactive Publication Date: 2011-11-09
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the conventional soft program operation, although the threshold voltage of only one cell included in one cell string is greater than the verification voltage, the soft program operation of the entire block is stopped.
Therefore, the distribution of threshold voltages of erased cells may widen in case of using soft program operation

Method used

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Embodiment Construction

[0024] Hereinafter, embodiments of the present invention will be described in more detail with reference to the drawings.

[0025] figure 1 is a view illustrating a nonvolatile memory device according to one embodiment of the present invention.

[0026] The non-volatile memory device includes: a memory cell array 100; even bit lines BLe and odd bit lines BLo coupled to the memory cell array 100; a register circuit 120 for storing specific data; connected to the bit lines BLe and BLo and a sense node SO formed at the node of the register circuit 120; and a bit line selection circuit 110 for selectively coupling the even bit line BLe and the odd bit line BLo to the sense node SO. The page buffer is defined by the bit line selection circuit 110 and the register circuit 120 . In another implementation, a different number of bit lines is associated with each page buffer.

[0027] The memory cell array 100 has a plurality of cell strings. Each cell string includes a drain select...

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Abstract

A soft program method in a non-volatile memory device for performing a soft program step so as to improve threshold voltage distribution of an erased cell is disclosed. The soft program method in a non-volatile memory device includes performing a soft program for increasing threshold voltages of memory cells by a given level, wherein an erase operation is performed about the memory cells, performing a verifying operation for verifying whether or not a cell programmed to a voltage more than a verifying voltage is existed in each of cell strings, and performing repeatedly the soft program untilit is verified that whole cell strings have one or more cell programmed to the voltage more than the verifying voltage.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 2007-79487 filed on Aug. 8, 2007, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a soft programming method in a non-volatile memory device for performing a soft programming step in order to improve the threshold voltage distribution of erased cells. Background technique [0004] Recently, there has been an increased demand for nonvolatile memory devices that electronically program and erase data and refresh functions that do not require periodic rewriting of data. [0005] A non-volatile memory device generally includes an array of memory cells having matrix-type cells for storing data and a page buffer for programming data to or reading data from specific cells in the memory cells . [0006] The page buffer has: a pair of bit lines connected to a given memory cell; a regis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10
CPCG11C16/0483G11C16/3404G11C16/34G11C16/12G11C16/10
Inventor 朴成济
Owner SK HYNIX INC
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