Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for optimizing scan exposure

A technology of scanning exposure and scanning direction, applied in the field of exposure, to achieve the effect of expanding the photolithography process window, prolonging the service life and saving economic costs

Inactive Publication Date: 2010-10-13
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The purpose of the present invention is to provide a method for optimizing scanning exposure, which can effectively solve the problems faced by the scanning exposure device when exposing patterns with a limit feature size or smaller than the limit feature size, and break through the standard limit exposure size of the scanning exposure device , prolong the service life of the exposure device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] The method for optimizing scanning exposure of the present invention, when the scanning exposure device (Canon FPA 5000 ES3) exposure resolution can reach the limit feature size (0.13um) or less than its limit feature size pattern, without changing the exposure device scanning Under the condition of the direction control module, the default standard exposure scanning speed of the exposure device is not used.

[0018] By adjusting the parameters of the scanning speed control module of the exposure device, the relative movement speed between the wafer and the mask is fine-tuned so that it is lower than the standard scanning speed (350mm / s) of the exposure device.

[0019] During the exposure scanning process, by observing the defects of the pattern after exposure at the exposure scanning speed, if the defect exceeds the requirement of the yield rate, continue to slowly reduce the exposure scanning speed until the exposed pattern meets the requirements, no longer reduce the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an optimization scanning exposure method which optimizes the speed of scanning exposure under the condition of not changing a scanning direction control module of an exposure device. When a pattern of a limit characteristic size achieved by the resolving capability of the scanning type exposure device or a pattern less than the limit characteristic size thereof are exposed, speed control module parameters are adjusted to perform the fine adjustment and the reduction to the exposure scanning speed; under the condition of not being lower than the saturation scanning speed of the exposure device, a photoetching technology window can be effectively expanded, so as to enable the exposure device to break through a limit standard of the characteristic size exposed by the scanning exposure device and expose a pattern of a smaller characteristic size. By using the method, the scanning type exposure device can be applied in the exposure technology of the standard limit characteristic size or the exposure technology less than the standard limit characteristic size, thereby prolonging the service life thereof, and saving the economic cost.

Description

technical field [0001] The invention relates to exposure in the semiconductor photolithography process, in particular to an exposure method using a scanning exposure device. Background technique [0002] As the feature size of the semiconductor process enters the sub-micron and deep sub-micron stages, the requirements of the semiconductor process for the entire process equipment are also increasing. In the entire semiconductor process, the exposure device directly determines the minimum line width that can be produced in the entire process. With the continuous reduction of feature size, new challenges are constantly brought to the exposure device. Exposure devices have also experienced development stages such as contact exposure devices, proximity exposure devices, scanning projection exposure devices, steppers, and step-and-scan exposure devices, etc., and continue to meet the production requirements of small feature size semiconductors. [0003] The scanning exposure pro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20H01L21/027
Inventor 李碧峰方向平沈华峰朱禕明
Owner SEMICON MFG INT (SHANGHAI) CORP