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Method for producing silicon single crystal

A production method and technology of silicon single crystal, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of complex doping ratio, difficult to control product qualification rate, etc.

Active Publication Date: 2011-07-06
SIMAX SUZHOU GREEN NEW ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the current process, the resistivity of N-type polysilicon used as a raw material is generally in the range of 0.01-0.5Ω·cm. If the resistance is less than this range, the calculation of the doping ratio is very complicated, and it is difficult to control the pass rate of the product.

Method used

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  • Method for producing silicon single crystal
  • Method for producing silicon single crystal
  • Method for producing silicon single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～5

[0033] Mix 20kg of N-type polysilicon, 30kg of P-type polysilicon raw materials with a resistivity of 2Ω·cm, and a P-type master alloy with a resistivity of 0.003Ω·cm.

[0034] A silicon single crystal with a target resistivity of 0.9 Ω·cm was produced by the Czochralski method. The detailed formulations of N-type polysilicon, P-type polysilicon and master alloy are shown in Table 1:

[0035] Table 1:

[0036]

[0037] Example 3

Embodiment 6～17

[0039] Mix 20kg of N-type polysilicon and 30kg of P-type polysilicon raw materials with a P-type master alloy with a resistivity of 0.003Ω·cm.

[0040] A silicon single crystal with a target resistivity of 0.9 Ω·cm was produced by the Czochralski method. The detailed formulations of N-type polysilicon, P-type polysilicon and master alloy are shown in Table 2:

[0041] Table 2:

[0042]

[0043]

Embodiment 18～24

[0045] Mix 10kg of N-type polysilicon, 40kg of P-type polysilicon raw material with a resistivity of 2Ω·cm, and a P-type master alloy with a resistivity of 0.003·cm.

[0046] A silicon single crystal with a target resistivity of 0.9 Ω·cm was produced by the Czochralski method. The detailed formulations of N-type polysilicon, P-type polysilicon and master alloy are shown in Table 3:

[0047] table 3:

[0048]

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Abstract

The invention provides a method for producing silicon single crystal. The method is to select N-type polysilicon and P-type polysilicon with electric resistivity in certain range to be matched according to certain proportion as raw materials, and a P-type master alloy with electric resistivity of between 0.0028 and 0.0032 omega centimeter as a doping agent to produce a finished product of siliconsingle crystal with the electric resistivity of between 0.8 and 1 omega centimeter by the Czochralski method after the raw materials and the doping agent are mixed according to the certain proportion. The method discloses matching proportions of various materials, so that the formula for producing the silicon single crystal can be formulated simply and conveniently according to the proportions toensure the qualification rate of the finished products.

Description

technical field [0001] The invention relates to a method for producing silicon single crystal. Background technique [0002] In the existing silicon single crystal production process, how to select the appropriate raw material and calculate the doping ratio are the most important technical key points. It is necessary to accumulate experience in long-term production in order to improve the pass rate of the product and make the parameters of the product meet the requirements. Moreover, the formula of the master alloy used as a dopant, the ratio between the master alloy and the raw material, these parameters are not fixed, and need to be adjusted according to the actual situation. [0003] In the current process, the resistivity of N-type polysilicon used as a raw material is generally in the range of 0.01-0.5Ω·cm. If the resistance is less than this range, the calculation of the doping ratio is very complicated, and it is difficult to control the pass rate of the product. C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B15/04
Inventor 沈少杰
Owner SIMAX SUZHOU GREEN NEW ENERGY