Ion injection test body, ion injection region mask board and ion injection test method
A technology of ion implantation and testing methods, which is applied in semiconductor/solid-state device testing/measurement, electrical components, electrical solid-state devices, etc., and can solve the problem that the detection data of the ion implantation process cannot truly reflect the manufacturing effect of the ion implantation process of the product, SIMS data and WAT data differences and other issues, to achieve the effect of improving authenticity, reducing damage, and improving accuracy
Inactive Publication Date: 2011-07-06
SEMICON MFG INT (SHANGHAI) CORP
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[0005] However, in actual production, it is found that under the same process conditions, there are differences between SIMS data and WAT data. In other words, the ion implantation process detection data obtained by using the substrate cannot truly reflect the manufacturing effect of the product ion implantation process
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[0035] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.
[0036] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...
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An ion injection testing body corresponding to different semiconductor substrates comprises a device region. The testing body further comprises at least one testing region which is located outside the device region for ion injection process testing. The ion injection testing body can reflect relatively genuine manufacturing effects of the ion injection process on the product during the process ofthe ion injection process testing. The invention further provides an ion injection region mask plate for forming the ion injection testing body which can reflect the relatively genuine manufacturing effects of the ion injection process on the product. Furthermore, the invention provides an ion injection testing method to allow the ion injection process testing operation to reflect the relatively genuine manufacturing effects of the ion injection process on the product.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to an ion implantation test body, an ion implantation area mask and an ion implantation test method. Background technique [0002] Ion implantation is an important process in the semiconductor manufacturing process, and its process inspection has always been valued by the industry. At present, the industry mainly uses the detection data of the ion implantation process to adjust the ion implantation control process. For example: the Chinese patent application with the publication number "CN1638014" published on July 13, 2005 provides an ion beam detection device, which improves the detection of semiconductor wafers or similar materials by improving the wafer support to obtain ion beam cross-sectional views. control of ion implantation. Obviously, when the method is used to adjust the control process, it needs to cooperate with the improvement of the wafer suppor...
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IPC IPC(8): H01L23/544H01L21/266H01L21/66
Inventor 丁宇居建华赖李龙
Owner SEMICON MFG INT (SHANGHAI) CORP