Dilute magnetic semiconductor material with high curie temperature and its production method
A technology of dilute magnetic semiconductor and Curie temperature, which is applied in semiconductor/solid-state device manufacturing, material selection, and magnetism of inorganic materials, etc. It can solve problems such as low Curie temperature, low compatibility, and applications that cannot reach room temperature, and achieve Effect of high Curie temperature and manufacturing process compatibility
Inactive Publication Date: 2011-05-25
NORTH CHINA UNIVERSITY OF TECHNOLOGY
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Problems solved by technology
[0003] Diluted magnetic semiconductor materials in the prior art have a low Curie temperature, which cannot meet the conditions for room temperature applications
In the material preparation process, the compatibility with the current mass-produced mature integrated circuit manufacturing process is low
Method used
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[0015] The preferred embodiment of the dilute magnetic semiconductor material with high Curie temperature of the present invention includes a 4H-SiC substrate, and Fe ions are injected into the 4H-SiC substrate material. The concentration of Fe ions may be 5.0-5.2%, such as 5.1%, or other concentrations may be selected. The concentration of 4H-SiC substrate material can be 10 16 cm -3 Or so, other concentrations can also be used.
[0016] The above-mentioned preparation method of the dilute magnetic semiconductor material with high Curie temperature of the present invention, its preferred embodiment is, comprises the steps:
[0017] First, select a suitable concentration of 4H-SiC substrate material and perform pre-cleaning treatment;
[0018] Then, implant Fe ions into the 4H-SiC substrate material;
[0019] Afterwards, annealing is performed on the substrate material after the Fe ion implantation is completed.
[0020] The above-mentioned pre-cleaning treatment can be, ...
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Abstract
The invention discloses a diluted magnetic semiconductor material with high Curie temperature and a preparation method thereof; firstly, 4H-SiC with the consistency of 10<16>cm<-3> is used as substrate material and pre-cleaning disposal is carried out; subsequently, Fe ion with the consistency of 5.1% is injected into the substrate material; subsequently, HNH annealing disposal is carried out for the substrate material after the injection of Fe ion is completed; the substrate material is annealed for 5 minutes under the temperature of 300 DEG C under the hydrogen environment, annealed for 5 minutes at the temperature of 700 DEG C under the nitrogen environment and then annealed for 5 minutes at the temperature of 250 DEG C under the hydrogen environment. The gained diluted magnetic semiconductor material has high Curie temperature; furthermore, the preparation process is compatible with the preparation process of the existing integration circuit and has wide application prospect.
Description
technical field [0001] The invention relates to a preparation method of a semiconductor material, in particular to a dilute magnetic semiconductor material with a high Curie temperature and a preparation method thereof. Background technique [0002] Diluted magnetic semiconductor materials (DMS) have certain ferromagnetism and are compatible with semiconductor materials, so they have broad application prospects and are widely used in magnetic devices, magneto-optics, magnetoelectronics and other fields. At present, this type of material has been successfully It is used in spin-related devices, such as magnetic memory, spin filter devices, and quantum devices. [0003] Diluted magnetic semiconductor materials in the prior art have a low Curie temperature, which cannot meet the conditions for application at room temperature. In terms of the preparation process of the material, the compatibility with the mature integrated circuit manufacturing process of mass production is rel...
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IPC IPC(8): H01L43/12H01L43/10H01L21/34H01F1/40
Inventor 姜岩峰
Owner NORTH CHINA UNIVERSITY OF TECHNOLOGY