III-nitride semiconductor light emitting device

A technology of nitride semiconductors and light-emitting devices, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as difficult manufacturing, and achieve the effect of promoting current expansion and improving ESD characteristics
CN101404315BInactive Publication Date: 2010-09-15EPIVALLEY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
EPIVALLEY
Publication Date
2010-09-15
Estimated Expiration
Not applicable · inactive patent

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Abstract

The present invention relates to a III-nitride semiconductor light emitting device, and more particularly, to a III-nitride semiconductor light emitting device which can facilitate current spreading and improve electrostatic discharge characteristic by providing an undoped GaN layer with a thickness over 100 A in an n-side contact layer.
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Description

technical field

[0001] The present invention relates to a III-nitride semiconductor light-emitting device, more specifically, the present invention relates to providing a thickness exceeding The non-doped GaN layer promotes current spreading and improves electrostatic discharge characteristics of III-nitride semiconductor light-emitting devices.

[0002] The III-nitride semiconductor light-emitting device refers to, for example, an Al (x) Ga (y) In (1-x-y) Light-emitting devices such as light-emitting diodes with compound semiconductor layers composed of N (0≤x≤1, 0≤y≤1, 0≤x+y≤1), the group III nitride semiconductor light-emitting device may further include other groups of Elementally composed materials (such as SiC, SiN, SiCN, and CN) and semiconductor layers made of these materials. Background technique

[0003] figure 1 is a view describing an example of a conventional group III nitride semiconductor light emitting device. The Group III nitride semiconductor light ...

Claims

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