Light emitting element

Abstract

The invention discloses a light emitting element, a light-source generation device and a backlight source device. The light emitting element comprises a substrate, an extension structure, a first conductive structure and a second conductive structure, wherein the extension structure is positioned on the substrate and comprises a first semiconductor layer, a second semiconductor layer and a light emitting layer which is positioned between the first semiconductor layer and the second semiconductor layer; the extension structure has a groove; the side of the extension structure and partial surface of the first semiconductor layer are exposed; the first conductive structure is positioned on the exposed surface of the first semiconductor layer in the groove; the second conductive structure is positioned on the second semiconductor layer; the first conductive structure comprises a first electrode and a first electrode pad which are in electrical connection; the second conductive structure comprises a second electrode and a second electrode pad which are in electrical connection; and the area of at least one selected from the first electrode pad and the second electrode pad is between 1.5*10<4>mu m<2> and 6.2*10<4>mu m<2>.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting diode element with a current dispersing electrode. Background technique [0002] Light-emitting diodes (LEDs) have different light-emitting principles and structures from traditional light sources. They have the advantages of small size and high reliability, and are widely used in the market. For example, optical display devices, laser diodes, traffic signal signs, data storage devices, communication devices, lighting devices, and medical devices. [0003] Please refer to Figure 1A , 1B, Figure 1A Shown is a top view of the structure of a known nitride light-emitting diode 1, and FIG. 1B shows Figure 1A The structural cross-sectional view of the known nitride light-emitting diode 1 along the A-A' section line. The structure of the known nitride light-emitting diode 1 includes a substrate 11, an n-type nitride layer 12, a light-emitting layer 13, a p-type nitride la...

AI Technical Summary

Problems solved by technology

Among them, the p-type electrode and n-type electrode are also distributed in a parallel helical structure, which can solve the problems of uneven current dispersion and poor luminous efficiency of known nitride light-emitting diodes 1

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