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Data programming circuit and memory programming method

A data programming and circuit technology, applied in the field of data programming circuits, can solve problems such as complex programming methods

Active Publication Date: 2011-09-21
NAN YA TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, for phase-change memory cells, the more types of crystalline states, the more complicated the programming method required

Method used

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  • Data programming circuit and memory programming method
  • Data programming circuit and memory programming method
  • Data programming circuit and memory programming method

Examples

Experimental program
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Embodiment

[0053] figure 1 It is a characteristic diagram showing the write current versus the resistance value of a multi-level phase-change memory cell according to an embodiment of the present invention. The programming method disclosed in the present invention can provide currents with different current values ​​to heat the phase-change memory cell to change its resistance value, so that data can be stored in the phase-change memory. Such as figure 1 As shown, when the write current I write The current values ​​are I 00 , I 01 , I 10 and I 11 , the resistance value of the phase-change memory cell can be changed to R 00 , R 01 , R 10 and R 11 To respectively store two bits of data "00", "01", "10" and "11" in the phase change memory unit.

[0054] figure 2 It shows the data programming circuit 200 according to an embodiment of the present invention. available via the write current I write The write data Data of two bits is stored in the phase-change memory cell, wherein...

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Abstract

The invention relates to a data programming circuit and a ram programming method. The data programming circuit stores written data into a memory unit, a control circuit generates control signals according to the written data, and a current generation circuit provides a written current passing the memory unit according to the control signals to change the crystalline state of the memory unit. The written current has a pulse width corresponding to the written data, and the crystalline is corresponding to the written data.

Description

technical field [0001] The invention relates to a data programming circuit, in particular to a data programming circuit of a memory. Background technique [0002] Phase Change Memory (Phase Change Memory, PCM) is a non-volatile memory with high speed, high capacity density and low energy consumption, wherein the phase change memory unit in the phase change memory is formed by phase change materials, such as sulfur Department of materials (Chalcogenide) and so on. Under the operation of heat application, the phase change material can be switched between the crystalline (crystalline) state and the amorphous (amorphous) state, wherein the phase change material has different resistance values ​​in the crystalline state and the amorphous state, which can be expressed respectively Store data differently. [0003] Traditionally, in the amorphous state, the phase-change memory cell has a higher resistance value, which is used, for example, to represent the data stored in the phase...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56G11C16/10G11C16/30
Inventor 许世玄林烈萩江培嘉林文斌
Owner NAN YA TECH