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Through hole and through hole forming method

A contact hole and patterning technology, which is applied in the manufacture of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve problems such as complex processes

Active Publication Date: 2010-06-09
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the application of the above-mentioned method is limited to filling the single crystal 40 without holes between the gaps 12 on the surface of the precursor 10. For the process of forming through holes, if the above-mentioned method is used to form through holes without holes, the precursor needs to be formed first. Then sequentially form seed crystals, whiskers and single crystals in the precursor gap, the process is complex

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  • Through hole and through hole forming method
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Embodiment Construction

[0024] Although the invention will be described in more detail below with reference to the accompanying drawings, in which preferred embodiments of the invention are shown, it should be understood that those skilled in the art can modify the invention described herein and still achieve the advantageous effects of the invention. Therefore, the following description should be understood as a broad instruction for those skilled in the art, rather than as a limitation of the present invention.

[0025] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as changing from one embodiment to another in accordance with sy...

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Abstract

A method of forming through holes comprises steps of forming a dielectric layer on a semiconductor substrate, patterning the dielectric layer to form a contact hole, forming a binding metal layer anda first alloy layer which cover the contact hole, arranging a second alloy layer on the first alloy layer, wherein carbon content and oxygen content in the second alloy layer is higher than that of the first alloy layer, further, forming a connection metal layer which covers the second alloy layer and fills the contact hole, and finally forming a through hole. The invention can reduce possibilityof forming orifices during the forming process of the through hole. The invention further provides a through hole, and when the through hole is formed, the possibility of generating orifices can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a through hole and a method for forming the through hole. Background technique [0002] With the development of integrated circuits to deep submicron dimensions, the density of devices and the complexity of processes are increasing, and strict control of the process becomes more important. Among them, the through hole is used as the interconnection between the multi-layer metal layers and the connection channel between the active area of ​​the device and the external circuit. Because it plays an important role in the composition of the device structure, the formation process of the through hole has always been known to those skilled in the art. Pay attention to. [0003] Currently, the steps of forming vias include: first, as Figure 1a As shown, a dielectric layer 2 is formed on a semiconductor substrate 1; then, as Figure 1b As shown, the dielectric layer...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L23/522H01L23/532
Inventor 陈国海苏娜聂佳相
Owner SEMICON MFG INT (SHANGHAI) CORP