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Gate-division type flash memory sharing word line

A split-gate flash memory and word line technology, applied in information storage, static memory, read-only memory, etc., can solve the problem of device programming voltage reduction and achieve the effect of avoiding over-erasing and reducing the area

Inactive Publication Date: 2009-06-24
GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

Method used

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  • Gate-division type flash memory sharing word line

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Embodiment Construction

[0026] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0027] Please refer to figure 1 , figure 1 Shown is a schematic diagram of a split-gate flash memory structure sharing a word line according to a preferred embodiment of the present invention. The present invention proposes a word-line-sharing split-gate flash memory, which includes: a semiconductor substrate 100 with a source region 200 and a drain region 300 arranged at intervals thereon; a word line 400 disposed on the source region 200 and the drain region 300; the first storage bit cell 500, located between the word line 400 and the source region 200; the second storage bit cell 600, located between the word line 400 and the drain area 300, wherein the two storage bit cells 500, 600 are separated from the word line 400 by a tunnel oxide layer 700, and the two storage bit cells 500, 600 respe...

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Abstract

The invention provides a separated gate type flash memory for sharing a word line. The flash memory comprises a semiconductor substrate provided with a source electrode region and a drain electrode region which are arranged at intervals, a word line arranged between the source electrode region and the drain electrode region, a first storage bit unit positioned between the word line and the source electrode region, and a second storage bit unit positioned between the word line and the drain electrode region, wherein, the two storage bit units are separated by a tunnel oxide from the word line; one storage bit unit is provided with a first control gate and a first floating gate, and the other storage bit unit is provided with a second control gate and a second floating gate; and the two control gates are arranged at intervals on the two floating gates respectively. The separated gate type flash memory for sharing the word line can effectively reduce the area of a chip while ensuring that the chip retains the electrical isolation performance, and avoid the phenomenon of over-erasure at the same time.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to a split-gate flash memory sharing a word line. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special structure of electricall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/04H01L27/115G11C16/26G11C16/10G11C16/14
CPCH01L29/42332H01L29/66825H01L29/7887G11C16/0458H01L21/28273H01L29/40114
Inventor 顾靖
Owner GRACE SEMICON MFG CORP
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