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Non-contact nano-crystalline split-gate flash memory for sharing word line

A split-gate flash memory and nanocrystalline technology, which is applied in the direction of electrical components, electrical solid devices, circuits, etc., can solve the problem of device programming voltage reduction, achieve device size reduction, reduce area, and avoid over-erasing effects

Active Publication Date: 2015-05-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
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AI Technical Summary

Problems solved by technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

Method used

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  • Non-contact nano-crystalline split-gate flash memory for sharing word line

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Embodiment Construction

[0026] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0027] The present invention proposes a non-contact nanocrystalline split-gate flash memory that shares word lines. The obtained flash memory device can effectively reduce the area of ​​the chip while keeping the electrical isolation performance of the chip unchanged, and at the same time avoid excessive The problem of erasing.

[0028] Please refer to figure 1 , figure 1 Shown is a schematic diagram of the structure of a non-contact nanocrystalline split-gate flash memory sharing a word line according to a preferred embodiment of the present invention. The present invention proposes a non-contact nanocrystalline split-gate flash memory sharing a word line, comprising: a semiconductor substrate 10 having source regions 11 and drain regions 12 arranged at intervals thereon; a channel region 13 loc...

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Abstract

The invention provides a non-contact nano-crystalline split-gate flash memory for sharing a word line. An obtained flash memory enables two storage bit units to share one word line and realizes reading, programming and erasing to the storage bit units by applying different work voltages on the word line, a first control gate, a second control gate, a first bit line and a second bit line; a structure of bit line sharing enables the split-gate flash memory to efficiently reduce the area of a chip under the condition of keeping the electric isolating performance of the chip unchanged and can also avoid the problem of over-erasing. Meanwhile, by adopting the design of non contact, the flash memory has the advantages of small size and compatibility of a technology and a CMOS (Complementary Metal-Oxide-Semiconductor) traditional technology, thereby being beneficial to further shortening the size of the device.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to a non-contact nanocrystal split-gate flash memory sharing a word line. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/115H01L29/41H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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