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Word line-sharing contactless SONOS split gate type flash memory

A split-gate flash memory and non-contact technology, which is applied in the direction of electrical components, electric solid-state devices, circuits, etc., can solve the problem of device programming voltage reduction, achieve device size reduction, small size, and avoid over-erasing effects

Active Publication Date: 2010-10-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When traditional flash memory is moving towards higher storage density, due to structural limitations, it will face great challenges to further reduce the programming voltage of the device

Method used

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  • Word line-sharing contactless SONOS split gate type flash memory
  • Word line-sharing contactless SONOS split gate type flash memory

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Embodiment Construction

[0026] In order to better understand the technical content of the present invention, specific embodiments are given together with the attached drawings for description as follows.

[0027] The present invention proposes a non-contact SONOS split-gate flash memory that shares word lines. The obtained flash memory device can effectively reduce the area of ​​the chip while keeping the electrical isolation performance of the chip unchanged, and can also avoid over-erasing at the same time. problem of removal.

[0028] Please refer to figure 1 , figure 1 Shown is a schematic structural diagram of a non-contact SONOS split-gate flash memory sharing a word line in a preferred embodiment of the present invention. The present invention proposes a non-contact SONOS split-gate flash memory sharing a word line, which includes: a semiconductor substrate 10 with a source region 11 and a drain region 12 arranged at intervals thereon; a channel region 13 located at the source Between the e...

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PUM

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Abstract

The invention provides a word line-sharing contactless SONOS split gate type flash memory. In the obtained flash memory device, two storage bit cells share one word line, different operating voltages are applied to the word line, a first control gate, a second control gate, a first bit line and a second bit line to read, program and erase the storage bit cells, and the bit line-sharing structure enables the split gate type flash memory to effectively reduce the area of a chip under the condition of keeping the electric isolation performance of the chip unchanged and simultaneously can avoid the over-erase problems. Meanwhile, the contactless design enables the flash memory device to have the characteristics of small size and process compatibility with the CMOS traditional process, thereby being beneficial to further reducing the size of the device.

Description

technical field [0001] The invention relates to the field of semiconductor design and manufacture, and in particular to a non-contact SONOS split-gate flash memory sharing a word line. Background technique [0002] Flash memory has become a research hotspot in non-volatile memory due to its convenience, high storage density, and good reliability. Since the first flash memory product came out in the 1980s, with the development of technology and the storage needs of various electronic products, flash memory has been widely used in mobile and communication devices such as mobile phones, notebooks, handheld computers and U disks. , flash memory is a kind of non-volatile memory. Its operating principle is to control the switch of the gate channel by changing the critical voltage of the transistor or memory cell to achieve the purpose of storing data, so that the data stored in the memory will not be lost due to power interruption. Disappears, and flash memory is a special struct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H10B69/00
Inventor 曹子贵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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