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Isolated gate bipolar transistor and its manufacturing method

A gate, insulating layer technology, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as component damage

Inactive Publication Date: 2009-07-01
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This latch-up phenomenon can limit the safe operating area (SOA) of the IGBT and cause component damage due to excessive current flowing through the component suddenly

Method used

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  • Isolated gate bipolar transistor and its manufacturing method
  • Isolated gate bipolar transistor and its manufacturing method
  • Isolated gate bipolar transistor and its manufacturing method

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Embodiment Construction

[0010] An insulated gate bipolar transistor (IGBT) and a manufacturing method thereof according to embodiments of the present invention will be described below with reference to the accompanying drawings. According to an embodiment of the present invention, the first conductivity type may be P-type, and the second conductivity type may be N-type. According to other embodiments, the first conductivity type may be N type, and the second conductivity type may be P type.

[0011] Exemplary figure 1 is a side view of an IGBT according to an embodiment of the present invention. see example figure 1 , according to an embodiment of the present invention, the IGBT may include a first conductivity type collector ion implantation region 122 formed in the substrate 110 . The IGBT may include a first buffer layer 130 of a second conductivity type, which may be formed on and / or over the collector ion implantation region 122, and the first buffer layer 130 may include a first segment buff...

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Abstract

The present invention discloses an insulated gate bipolar transistor (IGBT) and a manufacturing method thereof. The insulated gate bipolar transistor may comprise the following components: a first conduction type collecting electrode ion-implanted region which is formed in the substrate; second conduction type first buffer layers which are formed above the collecting electrod ion-implanted region, and each of the plurality of first buffer layers comprises a first segment of buffer layer and a second segment of buffer layer; a first conduction type polycrystalline silicon layer which is formed from the surface of substrate to the collecting electrode ion-implanted region and has a contact structure; and a second conduction type buffer layer which is formed adjacently to the substrate area of first conduction type polycrystalline silicon layer. The segment buffer layers of different regions have different concentration. Therefore the amount of hole current injected through the buffer layer can be different to different regions. The manufacturing method of the invention can minimize the positive pressure drop and furthermore can prevent the bolt lock of parasitic thyristor.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2007-0138547 filed on December 27, 2007, the entire contents of which are hereby incorporated by reference into this application. technical field [0002] Embodiments of the present invention disclose an insulated gate bipolar transistor (hereinafter referred to as "IGBT") and a method of manufacturing the same. Background technique [0003] An insulated gate bipolar transistor (IGBT) is an element that combines the insulated gate structure of a MOS transistor and the high current density characteristics of a bipolar transistor. Unlike MOS transistors, IGBTs can have a parasitic PNPN thyristor structure, where the parasitic PNPN thyristor structure includes an N-type drift region, a P+ collector region, a P-type base, and a channel and / or the N+ emitter above. When the sum of the current gains of the NPN transistor and the PNP transistor is equal to or greater than 1, the PNPN thyristor can be t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L21/331
CPCH01L29/7395H01L29/0834H01L29/41766H01L29/72H01L29/73
Inventor 李相容
Owner DONGBU HITEK CO LTD
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