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LED structure

A light-emitting diode, p-type technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the process yield, damaging the light-emitting diode die, and increasing the cost of the process.

Active Publication Date: 2009-07-29
EPISTAR CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, no matter which method is used, additional process steps are required, which not only increases the process cost, but also often damages the LED die due to the additional process steps, reducing the process yield.

Method used

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Embodiment Construction

[0078] In order to make the purpose, features, and advantages of the present invention more comprehensible, several light-emitting diode elements are specifically cited as preferred embodiments and described in detail as follows.

[0079] Please refer to FIG. 2A and FIG. 2B . FIG. 2A is a structural cross-sectional view of a light emitting diode element 200 according to a first preferred embodiment of the present invention. Fig. 2B is a cross-sectional view of a light emitting diode element 200' according to a second preferred embodiment of the present invention.

[0080] First provide the epitaxial substrate 201, in a preferred embodiment of the present invention, the material of the epitaxial substrate 201 can be aluminum oxide (sapphire), silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO) , aluminum nitride (AlN), gallium nitride (GaN), or any combination of the above materials.

[0081] Next, a first n-type semiconductor layer 202 is formed on th...

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Abstract

The invention discloses a luminescent diode structure which comprises an extension substrate, a first n-type semi-conductive layer, an n-type three-dimensional electronic cloud structure, a second n-type semi-conductive layer, an active layer and a p-type semi-conductive layer, wherein, the first n-type semi-conductive layer is positioned on the extension substrate, the n-type three-dimensional electronic cloud structure is positioned on the first n-type semi-conductive layer, the second n-type semi-conductive layer is positioned on the n-type three-dimensional cloud electronic cloud structure, the active layer is positioned on the second n-type semi-conductive layer and the first p-type semi-conductive layer is positioned on the active layer.

Description

technical field [0001] The invention relates to a structure of a light-emitting diode, and in particular to a structure of a light-emitting diode with a three-dimensional electron cloud structure and (or) a three-dimensional hole cloud structure. Background technique [0002] The light-emitting diode (Light Emitting Diode; LED) in the solid-state light-emitting element has good photoelectric characteristics such as low power consumption, low calorific value, long operating life, impact resistance, small size, fast response, and stable wavelength of light. Therefore, it is often used in the fields of home appliances, indicator lights of instruments, and optoelectronic products. With the advancement of optoelectronic technology, solid-state light-emitting components have made great progress in improving luminous efficiency, service life, and brightness, and will become the mainstream of future light-emitting components in the near future. [0003] FIG. 1 is a cross-sectional ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
Inventor 郭政达许育宾王俊凯朱瑞溢陈宗光
Owner EPISTAR CORP
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