Unlock instant, AI-driven research and patent intelligence for your innovation.

LED element, backlight module and lighting apparatus

A technology of light-emitting diodes and components, applied in electrical components, lighting devices, optics, etc., to achieve simple process and improve the effect of excessive operating bias

Active Publication Date: 2011-09-28
EPISTAR CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The second electrical type semiconductor layer is located on the active layer

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • LED element, backlight module and lighting apparatus
  • LED element, backlight module and lighting apparatus
  • LED element, backlight module and lighting apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0078] This embodiment provides a light-emitting diode element with simple process and good luminous efficiency and its manufacturing method. Under a low operating bias voltage, it can ensure that the current introduced into the light-emitting diode element from the electrode can be evenly distributed to the active parts of the light-emitting diode element. layer, so as to greatly improve the luminous efficiency of the light emitting diode element.

[0079] Please refer to Figure 2A to Figure 2E , is a cross-sectional view of the process structure of a light emitting diode element 200 according to the first preferred embodiment of the present invention.

[0080] First provide an epitaxial substrate 201 (such as Figure 2A shown), in a preferred embodiment of the present invention, the material of the epitaxial substrate 201 can be sapphire (sapphire), silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO), nitride Materials composed of aluminum (AlN), ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a luminescent diode element, a back-light module and a luminescent device. The luminescent diode element comprises a substrate, a first electrical semi-conductive layer, an active layer, a second electrical semi-conductive layer, a transparent conductive oxide stacking structure, a first electrode and a second electrode, wherein, the first electrical semi-conductive layer is positioned on the substrate and provided with a first part and a second part. The active layer is positioned on the first part and the second electrical semi-conductive layer is positioned on the active layer. The transparent conductive oxide stacking structure is positioned on the second electrical semi-conductive layer and provided with at least two resistance interfaces. The first electrode is positioned on the second part and the second electrode is positioned on the transparent conductive oxide stacking structure.

Description

technical field [0001] The present invention relates to a light emitting diode element and a manufacturing method thereof, and in particular to a light emitting diode element having a transparent conductive oxide (Transparent Conducting Oxide; TCO) stack structure and a manufacturing method thereof. Background technique [0002] The light-emitting diode (Light Emitting diode; LED) in the solid-state light-emitting element has good photoelectric properties such as low power consumption, low calorific value, long operating life, impact resistance, small size, fast response speed, and can emit color light with a stable wavelength. characteristics, so it is often used in the fields of household appliances, indicator lights of instruments, and optoelectronic products. With the advancement of optoelectronic technology, light-emitting diode components have made great progress in improving luminous efficiency, service life and brightness, and have become the mainstream of light-emit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/13357H01L33/00H05B37/02H05B37/00
Inventor 余国辉杨於铮郭政达
Owner EPISTAR CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com