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Structure of Light Emitting Diodes

A light-emitting diode, p-type technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of reducing the process yield, damaging the light-emitting diode core, and increasing the process cost.

Active Publication Date: 2017-01-04
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, no matter which method is used, additional process steps are required, which not only increases the process cost, but also often damages the LED die due to the additional process steps, reducing the process yield.

Method used

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  • Structure of Light Emitting Diodes
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  • Structure of Light Emitting Diodes

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Embodiment Construction

[0079] In order to make the purpose, features, and advantages of the present invention more comprehensible, several light-emitting diode elements are specifically cited as preferred embodiments and described in detail as follows.

[0080] Please refer to Figure 2A with Figure 2B , Figure 2A It is a structural cross-sectional view of a light emitting diode element 200 according to the first preferred embodiment of the present invention. Figure 2B It is a structural cross-sectional view of a light emitting diode element 200' according to the second preferred embodiment of the present invention.

[0081] First provide the epitaxial substrate 201, in a preferred embodiment of the present invention, the material of the epitaxial substrate 201 can be aluminum oxide (sapphire), silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO) , aluminum nitride (AlN), gallium nitride (GaN), or any combination of the above materials.

[0082] Next, a first n-type se...

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Abstract

The invention discloses a structure of a light-emitting diode, which includes: an epitaxial substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer. The first n-type semiconductor layer is located on the epitaxial substrate, the n-type three-dimensional electron cloud structure is located on the first n-type semiconductor layer, the second n-type semiconductor layer is located on the n-type three-dimensional electron cloud structure, and the active layer is located on the second n-type semiconductor layer. On the p-type semiconductor layer, the first p-type semiconductor layer is located on the active layer.

Description

[0001] This application is a divisional application of the invention patent application with the application number 200810008563.X, the application date is January 23, 2008, and the invention title is "Structure of Light Emitting Diode". technical field [0002] The invention relates to a structure of a light-emitting diode, and in particular to a structure of a light-emitting diode with a three-dimensional electron cloud structure and (or) a three-dimensional hole cloud structure. Background technique [0003] The light-emitting diode (Light Emitting Diode; LED) in the solid-state light-emitting element has good photoelectric characteristics such as low power consumption, low calorific value, long operating life, impact resistance, small size, fast response, and stable wavelength of light. Therefore, it is often used in the fields of home appliances, indicator lights of instruments, and optoelectronic products. With the advancement of optoelectronic technology, solid-state ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14
CPCH01L33/14
Inventor 郭政达许育宾王俊凯朱瑞溢陈宗光
Owner EPISTAR CORP
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