Unlock instant, AI-driven research and patent intelligence for your innovation.

Structure of light emitting diode

A light-emitting diode, p-type technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of excessively increasing process costs, reducing process yield, and damaging light-emitting diode dies

Active Publication Date: 2014-01-08
EPISTAR CORP
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, no matter which method is used, additional process steps are required, which not only increases the process cost, but also often damages the LED die due to the additional process steps, reducing the process yield.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure of light emitting diode
  • Structure of light emitting diode
  • Structure of light emitting diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0079] In order to make the purpose, features, and advantages of the present invention more comprehensible, several light-emitting diode elements are specifically cited as preferred embodiments and described in detail as follows.

[0080] Please refer to Figure 2A with Figure 2B , Figure 2A It is a structural cross-sectional view of a light emitting diode element 200 according to the first preferred embodiment of the present invention. Figure 2B It is a structural cross-sectional view of a light emitting diode element 200' according to the second preferred embodiment of the present invention.

[0081] First provide the epitaxial substrate 201, in a preferred embodiment of the present invention, the material of the epitaxial substrate 201 can be aluminum oxide (sapphire), silicon carbide (SiC), silicon (Si), zinc oxide (ZnO), magnesium oxide (MgO) , aluminum nitride (AlN), gallium nitride (GaN), or any combination of the above materials.

[0082] Next, a first n-type se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a structure of a light emitting diode. The structure comprises an epitaxial substrate, a first n-type semiconductor layer, an n-type three-dimensional electron cloud structure, a second n-type semiconductor layer, an active layer and a p-type semiconductor layer, wherein the first n-type semiconductor layer is located on the epitaxial substrate; the n-type three-dimensional electron cloud structure is located on the first n-type semiconductor layer; the second n-type semiconductor layer is located on the n-type three-dimensional electron cloud structure; the active layer is located on the second n-type semiconductor layer; and the first p-type semiconductor layer is located on the active layer.

Description

[0001] This application is a divisional application of the invention patent application with the application number 200810008563.X, the application date is January 23, 2008, and the invention title is "Structure of Light Emitting Diode". technical field [0002] The invention relates to a structure of a light-emitting diode, and in particular to a structure of a light-emitting diode with a three-dimensional electron cloud structure and (or) a three-dimensional hole cloud structure. Background technique [0003] The light-emitting diode (Light Emitting Diode; LED) in the solid-state light-emitting element has good photoelectric characteristics such as low power consumption, low calorific value, long operating life, impact resistance, small size, fast response, and stable wavelength of light. Therefore, it is often used in the fields of home appliances, indicator lights of instruments, and optoelectronic products. With the advancement of optoelectronic technology, solid-state ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L33/14
CPCH01L33/14
Inventor 郭政达许育宾王俊凯朱瑞溢陈宗光
Owner EPISTAR CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com