Method for realizing positioning of ZnO nanowire to field effect transistor substrate

A positioning method and nanowire technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as inability to accurately locate and achieve layout registration, and achieve the effect of saving production costs
CN101552205BInactive Publication Date: 2010-12-15SEMICON MFG INT (SHANGHAI) CORP +1
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Patent Information

Authority / Receiving Office
CN Β· China
Patent Type
Patents(China)
Current Assignee / Owner
SEMICON MFG INT (SHANGHAI) CORP
Publication Date
2010-12-15
Estimated Expiration
Not applicable Β· inactive patent

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Abstract

The invention discloses a method for realizing positioning of a ZnO nanowire to a field effect transistor substrate. The method comprises the following steps: positive photoresist and cross positive photoresist are adopted on the field effect transistor substrate, and regularly arranged crosses are formed by developing; the Ti / Au is vaporized to form a metal cross Marker and queue markers on bothsides of the cross; the ZnO nanowire is stripped off from the original growth substrate by an ultrasonic ethanol hydrolysis method; and the liquid drop containing the ZnO nanowire is dropped to the center of the metal cross Marker through a dropper, and the position of the nanowire is positioned by using the metal cross Marker and the queue markers on both sides of the cross. By using the invention, the deposition and the positioning of the ZnO nanowire from the original glass substrate to the field effect transistor substrate are realized, the problem of random arrangement of the ZnO nanowiredeposited on the device substrate is solved, and the accurate positioning of the ZnO nanowire is realized.
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Description

technical field

[0001] The invention relates to the technical field of compound semiconductor devices, in particular to a method for positioning a ZnO nanowire to a field effect tube substrate by using a cross mark. Background technique

[0002] Nanowires (including nanotubes) are one of the most advanced topics in nanotechnology and condensed matter physics research. They have superior physical properties and are the structural units for constructing nanoscale components such as lasers, sensors, field-effect transistors, light-emitting diodes, logic circuits, spintronic devices, and quantum computers.

[0003] Especially semiconductor nanowires, which can not only be used as basic building blocks, but also be used to connect various nanodevices. Through in-depth research on semiconductor nanowires, it is expected to prepare electronic, photon and spin information processing devices with complex functions on a single nanowire.

[0004] In addition, a variety of composite n...

Claims

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