Correlated duplex-sampling circuit and complementary metal oxide semiconductor (CMOS) image sensing unit
A resampling and circuit technology, applied in electrical components, logic circuit connection/interface layout, TV, etc., can solve problems such as increased circuit noise, deteriorated image quality, and increased difficulty in back-end circuit design, achieving low noise and high design The effect of low difficulty
Inactive Publication Date: 2009-10-14
NOVATEK MICROELECTRONICS CORP
View PDF1 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0012] To sum up, the method of improving the input linear range of the traditional correlated double sampling circuit will cause the problem of decreased gain or increased circuit noise, which will lead to increased difficulty in the design of the back-end circuit or deterioration of image quality
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0052] An example of the present invention provides a correlated double sampling circuit and a CMOS image sensing unit using the correlated double sampling circuit. The correlated double sampling circuit performs an equal level shift on the sensed signal and the reset signal after sampling. bit. Therefore, the voltage difference between the sensing signal and the reset signal remains unchanged, but the levels of the sensing signal and the reset signal can be adjusted to fall within the linear input range. Hereinafter, several examples and diagrams will be used in detail to make the features and advantages of the present invention more comprehensible.
[0053] Please refer to Figure 2A , Figure 2A is a circuit diagram of the correlated double sampling circuit 20 provided by the example of the present invention. The correlated double sampling circuit 20 has an input terminal PIX_OUT, output terminals CDS_OUT_RST and CDS_OUT_SIG. The correlated double sampling circuit 20 in...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention provides a correlated duplex-sampling circuit and a complementary metal oxide semiconductor (CMOS) image sensing unit using the same. Equivalent level shifting is carried out for the sampled sensing signal and a reset signal by the correlated duplex-sampling circuit, thus a voltage difference value of the sensing signal and the reset signal still remain the same, but the level of the sensing signal and the reset signal can be adjusted so that the level is a linear input range. Compared with the traditional correlated duplex-sampling circuit, the correlated duplex-sampling circuit provided by the embodiment of the invention can not reduce the gain, thereby a rear-end circuit of the correlated duplex-sampling circuit has lower design difficulty and lower noise; and in addition, the CMOS image sensing unit of the correlated duplex-sampling circuit also has the advantages.
Description
technical field [0001] The present invention relates to a complementary metal oxide semiconductor image sensor (CMOS sensor), and in particular to a correlated double sampling (Correlated Double Sampling, CDS) circuit of a metal oxide semiconductor image sensor and the use of the correlated double sampling circuit CMOS image sensing unit. Background technique [0002] With the advancement of technology, the popularization of digital cameras allows people to record images freely. There are multiple image sensing units in the digital camera, which are used to sense images, convert optical signals into electronic signals and store them in memory cards or other storage media. [0003] Please refer to figure 1 , figure 1 is a block diagram of a conventional CMOS image sensing unit 10 . The conventional image sensing unit 10 includes a timing generator (Timing Generator) 11, a column decoder 12, a row decoder 13, a pixel array (Pixel Array) 14, a correlated double sampling cir...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H04N3/15H03K19/0175
Inventor 周国煜
Owner NOVATEK MICROELECTRONICS CORP