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Luminescence module

A technology of light-emitting modules and light-emitting diodes, applied in the directions of optics, light sources, electric light sources, etc., can solve the problems of large structure, high installation cost, and restrictions on the large-scale promotion and application of lighting devices, and achieve the effect of small volume

Inactive Publication Date: 2009-11-11
HONG FU JIN PRECISION IND (SHENZHEN) CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, currently on the market, solar-powered lighting devices such as solar street lamps usually have bulky structures. For example, in the prior art, solar cells and light-emitting elements for converting solar energy into electrical energy, such as fluorescent lamps, Light-emitting diodes generally need to be connected with a substrate, which leads to high installation costs and also restricts the large-scale promotion and application of solar-powered lighting devices.

Method used

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  • Luminescence module
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Embodiment Construction

[0010] The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0011] see figure 1 , a light emitting module 10 provided by the first embodiment of the present invention includes at least one light emitting diode chip 11 , a solar cell 12 , and at least one connecting electrode 13 connecting the light emitting diode chip 11 and the solar cell 12 .

[0012] The LED chip 11 includes a first N-type semiconductor layer 112 , a first P-type semiconductor layer 114 and a quantum well (Multi Quantum Well, MQW) layer 116 . The quantum well 116 is located between the first N-type semiconductor layer 112 and the first P-type semiconductor layer 114 , and an N-type electrode 118 is formed on the first N-type semiconductor layer 112 .

[0013] The first N-type semiconductor layer 112 can be made of gallium nitride (GaN) doped with silicon (Si), and the first P-type semiconductor layer 114 can be made of aluminum ...

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Abstract

The invention relates to a luminescence module, which comprises at least one LED chip, a solar battery and a connection electrode, wherein each LED chip is provided with a first P-type / N-type semi-conductor layer; the solar battery is provided with a second P-type / N-type semi-conductor layer; and the at least one connection electrode is clamped between the second P-type / N-type semi-conductor layerof the solar battery and the first P-type / N-type semi-conductor layer of the at least one LED chip to connect the solar battery and the at least one LED chip. The solar battery and the LED chip are directly connected through the connection electrode to form the luminescence module, so that the luminescence module has high integration and smaller volume, and can be applied to a miniaturized electronic product, for example, the luminescence module is used as a mobile phone backlight module for providing screen display, and the like.

Description

technical field [0001] The invention relates to a light emitting module, in particular to a light emitting module powered by a solar cell (Solar Cell). Background technique [0002] With the advocacy of the concept of energy conservation and environmental protection in today's era, more and more green energy sources have been developed and utilized. Among them, solar energy, as the most ideal green energy available, has been converted into electric energy and widely used in street lamps, ground lamps, and airport lighting. and other lighting devices to provide the electric energy consumed when the lighting device emits light. Please refer to the article Amorphous-Silicon / Polymer Solar Cells and Key Design Rules for Hybrid SolarCells published on the 2006 IEEE4th World Conference on Photovoltaic Energy Conversion for details on the structure of solar cells. [0003] However, currently on the market, lighting devices powered by solar energy, such as solar street lamps, usuall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L25/00H01L23/488G02F1/13357F21S9/02F21S9/03F21V23/06F21Y101/02G02F1/1335
CPCH01L2224/48091H01L31/02008H01L25/167G02F2001/13324G02F1/133603H01L2924/3025Y02E10/50G02F1/13324H01L2924/00014H01L2924/00
Inventor 陈杰良
Owner HONG FU JIN PRECISION IND (SHENZHEN) CO LTD