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Catadioptric projection objective with tilted deflecting mirrors, projection exposure apparatus, projection exposure method, and mirror

A technology of projection objective lens and deflection mirror, which is applied in the field of catadioptric projection objective lens, and can solve the problem of "reflective coating cannot be obtained"

Active Publication Date: 2009-11-11
CARL ZEISS SMT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this "ideal" reflective coating is currently not available

Method used

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  • Catadioptric projection objective with tilted deflecting mirrors, projection exposure apparatus, projection exposure method, and mirror
  • Catadioptric projection objective with tilted deflecting mirrors, projection exposure apparatus, projection exposure method, and mirror
  • Catadioptric projection objective with tilted deflecting mirrors, projection exposure apparatus, projection exposure method, and mirror

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Embodiment Construction

[0078] In the following description of the preferred embodiments, reference is made to a mask (reticle) bearing a pattern of layers of an integrated circuit or other pattern, eg a grating pattern. The image of the object is projected onto a wafer acting as a substrate, which is coated with a layer of photoresist material, but other types of substrates such as liquid crystal display components or substrates for optical gratings are also feasible.

[0079] In the figures, corresponding features are indicated with similar or identical reference signs for ease of understanding.

[0080] Fig. 1 schematically shows a microlithographic projection exposure apparatus in the form of a wafer scanner WS for manufacturing large-scale integrated semiconductor components in a step-and-scan mode. The projection exposure apparatus comprises as light source an ArF excimer laser L with an operating wavelength of approximately 193 nm. Other operating wavelengths such as 248nm or 157nm are possib...

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Abstract

A catadioptric projection objective has a plurality of optical elements arranged along an optical axis to image a pattern arranged in an object surface of the projection objective onto an image surface of the projection objective. The optical elements include a concave mirror; a first deflecting mirror tilted relative to the optical axis by a first tilt angle t1 about a first tilt axis to deflect light from the object surface towards the concave mirror or to deflect light from the concave mirror towards the image surface; and a second deflecting mirror tilted relative to the optical axis by a second tilt angle t2 about a second tilt axis. The first deflecting mirror has a first reflective coating with reflectivity Rs (alpha1) for s-polarized light and a reflectivity Rp(alpha1) for p-polarized light incident on the first deflecting mirror at first angles of incidence alpha1 from a first range of angles of incidence according to (t1-Deltaalpha1)<=alpha1<=(T1+Deltaalpha1). The second deflecting mirror has a second reflective coating with a reflectivity Rs(alpha2) for s-polarized light and a reflectivity Rp(alpha2) for p-polarized light incident on the second deflecting mirror at second angles of incidence alpha2 from a second range of angles of incidence according to (t2-Deltaalpha2), for s-polarized light of polar edge rays accumulated upon reflection on the first and second deflecting mirrors is substantially equal to a second reflectivity sum, Rpfor p-polarized light of equatorial edge rays accumulated upon reflection on the first and second deflecting mirrors.

Description

technical field [0001] The invention relates to a catadioptric projection objective comprising a plurality of optical elements arranged to image a pattern placed in the projection objective's object plane onto the projection objective's mirror surface. The invention further relates to a projection exposure apparatus, a projection exposure method using such a projection objective and a mirror. Background technique [0002] Microlithographic processes are commonly used in the fabrication of semiconductor elements such as integrated circuit (IC) liquid crystal elements, micropatterning members, and micromechanical components. [0003] A projection exposure apparatus for lithography generally includes an illumination system configured to transform raw light from a light source into illumination light, and a projection objective. Light from the illumination system illuminates the reticle (or mask) with a given pattern, and the projection objective transmits an image of the patte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B17/08G03F7/20
CPCG03F7/70566G03F7/70225G02B17/08G02B27/286G03F7/20
Inventor 拉尔夫·米勒阿克塞尔·戈纳迈耶沃尔夫冈·辛格
Owner CARL ZEISS SMT GMBH