Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Littrow-structural grating external cavity semiconductor laser and frequency tuning method

A frequency tuning, semiconductor technology, applied in the field of Littrow structure grating feedback external cavity semiconductor laser, can solve problems such as disadvantages, achieve the effect of stable beam position and reducing translation change

Inactive Publication Date: 2012-10-03
NAT INST OF METROLOGY CHINA
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is very unfavorable for many application fields that have high requirements on the accuracy and stability of the beam position

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Littrow-structural grating external cavity semiconductor laser and frequency tuning method
  • Littrow-structural grating external cavity semiconductor laser and frequency tuning method
  • Littrow-structural grating external cavity semiconductor laser and frequency tuning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are illustrated.

[0028] The Littrow structure external cavity semiconductor laser structure of an embodiment of the present invention is as figure 2 shown. It includes: a semiconductor laser tube 1, a collimator lens 3, a diffraction grating 12 and a deflection mirror 5. The diffraction grating 12 and the deflection mirror 5 are integrated and can rotate around the quasi-synchronous frequency tuning rotation center Pq of the grating together to realize laser frequency tuning.

[0029] The laser light emitted by the semiconductor laser tube 1 is collimated by the aspheric collimating lens 3 and then incident on the diffraction grating 12 . The first-order diffracted light of the diffraction grating 12 and the incident light collinearly reverse along the original path and return to the semiconductor laser tube 1, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Littrow-structural grating external cavity semiconductor laser and a frequency tuning method. In the grating external cavity semiconductor laser, after laser emitted by a semiconductor laser tube (1) is aligned by an aspherical mirror (3) and incident onto a grating (12), one-level diffraction light of the grating (12) and incident light are collinear to reversely returnto the semiconductor laser tube (1) along the same way; zero-level diffraction of the grating (12) or the mirror reflection light of the grating (12) is reflected by a reflector (5) and then output; and when laser frequency selection is carried out by rotating the grating (12), the reflector (5) and the grating (12) integrally rotate, and the reflection surface of the reflector (5) and the diffraction surface of the grating (12) form an included angle. The laser and the method greatly reduce the translation change of light beams when the grating and the reflector rotate.

Description

technical field [0001] The invention relates to a grating feedback external cavity semiconductor laser, in particular to a Littrow structure grating feedback external cavity semiconductor laser, a method for frequency or wavelength tuning of the grating feedback external cavity semiconductor laser and reducing beam translation caused by tuning. Background technique [0002] Existing Littrow structure external cavity semiconductor lasers, such as figure 1 shown. Including: semiconductor laser tube (LD) 1, aspheric collimating lens (AL) 3, diffraction grating (GT) 12 and reflector (M) 5. [0003] Among them, N represents the normal line of the grating, and θ represents the incident angle or diffraction angle of the incident beam on the grating after the laser light emitted by the semiconductor laser tube 1 is collimated by the aspheric collimator lens 3 (the diffracted beam is collinearly opposite to the incident beam) . In the Littrow structure external cavity semiconducto...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/14H01S5/06
Inventor 臧二军曹建平李烨方占军
Owner NAT INST OF METROLOGY CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com