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Programmable read only memory structure and manufacturing method thereof

A technology of read-only memory and manufacturing method, which is applied in the field of semiconductor technology to achieve the effect of avoiding tip discharge and improving service life

Inactive Publication Date: 2010-02-03
GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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Problems solved by technology

[0004] In order to solve the above-mentioned problem of floating gate tip discharge, the present invention provides a method for preventing the phenomenon of tip discharge in the floating gate

Method used

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  • Programmable read only memory structure and manufacturing method thereof
  • Programmable read only memory structure and manufacturing method thereof
  • Programmable read only memory structure and manufacturing method thereof

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Embodiment Construction

[0022] The structure of the programmable read-only memory and its manufacturing method of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0023] First, please refer to figure 2 , figure 2 is a schematic structural diagram of the first embodiment of the programmable read-only memory of the present invention, from figure 2 It can be seen that the present invention includes a silicon substrate 11; a gate oxide layer 12 located on the silicon substrate 11; a floating gate 13 located on the gate oxide layer 12, and the floating gate 13 is arc-shaped structure, the floating gate of the arc structure avoids the occurrence of tip discharge, thereby protecting the memory; the oxide layer 14, located on the outer surface of the floating gate 13, protects the floating gate. Preferably, the floating gate 13 is a semicircular structure, that is, as image 3 as shown, image 3 It is a structural...

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Abstract

The invention provides a programmable read only memory structure and a manufacturing method thereof. The structure comprises a silicon substrate, a grid electrode oxide layer, a floating grid electrode and an oxide layer, wherein, the grid electrode oxide layer is located on the silicon substrate, the floating grid electrode is arranged on the grid electrode oxide layer, the floating grid electrode is in arc structure, and the oxide layer is arranged on the outer surface of the floating grid electrode. The invention can effectively avoid point discharge phenomenon of the floating grid electrode and prolong the service life of a memory.

Description

technical field [0001] The invention belongs to a semiconductor technology, in particular to a programmable read-only memory structure and a manufacturing method thereof. Background technique [0002] A read only memory (ROM) element is a semiconductor element used to store data, which is composed of a plurality of memory cells and has been widely used in computer data storage. Generally, according to the data storage method, the read-only memory can be divided into mask type read-only memory (Mask Rom), one-time programmable read-only memory (OTP ROM), multiple times programmable read-only memory (MTPROM), erasable There are several types of programmable read-only memory (EPROM) and electrically erasable programmable read-only memory (EEPROM). [0003] Please refer to figure 1 , figure 1 It is a structural schematic diagram of a floating gate of a programmable read-only memory (PROM) in the prior art. As can be seen from the figure, the PROM includes a silicon substrate ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L29/788H01L29/423H01L21/8247H01L21/336H01L21/28H10B69/00
Inventor 肖海波齐龙茵
Owner GRACE SEMICON MFG CORP
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