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Image sensor and method for fabricating the same

An image sensor and pixel technology, applied in semiconductor/solid-state device manufacturing, image communication, electric solid-state devices, etc., can solve the problems of dark current saturation and sensitivity deterioration, and the inability to transmit photocharges

Inactive Publication Date: 2010-05-26
DONGBU HITEK CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In a related field, photocharges cannot be smoothly transferred between photodiodes and readout circuits, thereby disadvantageously causing generation of dark current or deterioration of saturation and sensitivity

Method used

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  • Image sensor and method for fabricating the same
  • Image sensor and method for fabricating the same
  • Image sensor and method for fabricating the same

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Embodiment Construction

[0020] Hereinafter, an image sensor and a manufacturing method thereof according to preferred embodiments of the present invention will be illustrated in detail with reference to the accompanying drawings.

[0021] In describing the embodiments of the present invention, it will be understood that when a layer is referred to as being "on / over" another layer, it can be directly on the other layer or through an intervening layer present between the layers. indirectly on another layer.

[0022] In the drawings, the thickness and size of each layer are exaggerated, omitted or simplified for better understanding of the present invention and clarity. In addition, the size of an element does not necessarily mean its actual size.

[0023] Figure 1 to Figure 7 is a cross-sectional view showing a process of manufacturing an image sensor according to an embodiment of the present invention.

[0024] Such as figure 1 As shown, an interlayer dielectric film 30 including a metal line 40 ...

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Abstract

An image sensor includes readout circuit arranged over a semiconductor substrate, an interlayer dielectric film covering the readout circuit and including metal lines, a buffer layer arranged over the interlayer dielectric film, a crystallized silicon layer arranged over the buffer layer, an ion-implantation layer to partition photodiode regions corresponding to unit pixels in the crystallized silicon layer, and a metal plug arranged in a via-hole of the buffer layer, to electrically connect the photodiode region to the metal lines. In accordance with the method, a channel, enabling smooth transfer of photocharges, is provided between the photodiode and the readout circuit, to minimize dark current sources and prevent a deterioration in saturation and sensitivity and thereby improve image properties.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2008-0096408 filed on Oct. 1, 2008, the entire contents of which are hereby incorporated by reference. technical field [0002] The invention relates to an image sensor and a manufacturing method thereof. Background technique [0003] Image sensors are semiconductor devices that convert optical images into electrical signals. Such image sensors mainly include charge coupled device (charge coupled device, CCD) image sensors and complementary metal oxide silicon (complementary metal oxide silicon, CMOS) image sensors. [0004] In a related art, photodiodes are formed on a substrate by ion implantation. At this point, the size of photodiodes is gradually reduced to increase the number of pixels without increasing the pixel chip size. This reduction in photodiode size results in a reduction in the light-receiving region, resulting in deterioration of image quality. [0005] In addition, the height o...

Claims

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Application Information

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IPC IPC(8): H04N5/335H04N3/15H01L27/146H01L21/82
CPCH01L27/14665H01L27/14634H01L27/146
Inventor 郑伍珍
Owner DONGBU HITEK CO LTD
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