MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same
A silicon microphone, vertical integration technology, used in electrical components, electrostatic transducer microphones, sensors and other directions, can solve the problems of reducing yield, complicating the preparation process, increasing costs, etc., to simplify the production process, reduce production costs, The effect of enhancing reliability
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[0050] The present invention will be further described below in conjunction with specific drawings and embodiments.
[0051] like Figure 1 to Figure 16 As shown: the present invention includes a back plate silicon substrate 1, a CMOS circuit 2, a first insulating dielectric layer 3, a second insulating dielectric layer 4, a connecting terminal 5, a lower electrode 6, a metal bonding layer 7, a shallow groove 8, a vibration Membrane silicon base 9, shallow pit 10, insulating support layer 11, diaphragm body thin film 12, mask layer 13, deep pit 14, input connection groove 15, output connection groove 16, positioning hole 17, deep hole 18, input end 19 , the output terminal 20 and the etching window 21.
[0052] like figure 1 and Figure 16 As shown: the MEMS silicon microphone includes a back plate and a diaphragm body located on the back plate. In the present invention, the back plate includes a back plate silicon base 1, and the back plate silicon base 1 is provided with ...
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