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MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same

A vertically integrated silicon microphone technology, applied to electrical components, sensors, microphone ports/microphone accessories, etc., can solve problems such as increased costs, reduced yields, and complicated manufacturing processes, so as to enhance reliability and simplify production Process, the effect of reducing production costs

Active Publication Date: 2012-01-25
华景传感科技(无锡)有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of changing the structure of the vibrating film will complicate the preparation process, increase the cost and reduce the yield

Method used

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  • MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same
  • MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same
  • MEMS silicon microphone longitudinally integrated with CMOS circuit, and manufacturing method for the same

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Embodiment Construction

[0050] The present invention will be further described below in conjunction with specific drawings and embodiments.

[0051] Such as Figure 1 to Figure 16 As shown: the present invention includes a back plate silicon substrate 1, a CMOS circuit 2, a first insulating dielectric layer 3, a second insulating dielectric layer 4, a connecting terminal 5, a lower electrode 6, a metal bonding layer 7, a shallow groove 8, a vibration Membrane silicon base 9, shallow pit 10, insulating support layer 11, diaphragm body thin film 12, mask layer 13, deep pit 14, input connection groove 15, output connection groove 16, positioning hole 17, deep hole 18, input end 19 , the output terminal 20 and the etching window 21.

[0052] Such as figure 1 and Figure 16 As shown: the MEMS silicon microphone includes a back plate and a diaphragm body located on the back plate. In the present invention, the back plate includes a back plate silicon base 1, and the back plate silicon base 1 is provided...

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Abstract

The invention discloses a MEMS (Micro Electro Mechanical System) silicon microphone longitudinally integrated with CMOS (Complementary Metal Oxide Semiconductor) circuit, and a manufacturing method for the same. The MEMS silicon microphone comprises a back polar plate silicon substrate and a diaphragm silicon substrate; the back polar plate silicon substrate is provided with the CMOS circuit, an electrical insulating layer is deposited on the surface of the back polar plate silicon substrate where the CMOS circuit is arranged correspondingly, the electrical insulating layer is provided with a metal bonding layer, and the metal bonding layer is electrically connected with a connecting end of the CMOS circuit; the back polar plate silicon substrate is provided with a plurality of sound holes; the diaphragm silicon substrate is provided with a diaphragm on a surface where the back polar plate silicon substrate is connected, the diaphragm silicon substrate is internally provided with a pit penetrating through the diaphragm silicon substrate, the pit is located directly over the sound holes, and the pit and the sound holes are distributed correspondingly; the diaphragm silicon substrate is mounted on the metal bonding layer in a manner of bonding corresponding to the surface on which the diaphragm is located, the diaphragm is electrically connected with the CMOS circuit through the metal bonding layer, and the diaphragm is in clearance fit with a lower electrode. The MEMS silicon microphone can be integrated with a CMOS circuit chip vertically, so that production technology and packaging structure of the MEMS silicon microphone both can be simplified, production cost can be reduced, and reliability of components can be enhanced.

Description

technical field [0001] The invention relates to a silicon microphone and a preparation method thereof, in particular to a MEMS silicon microphone vertically integrated with a CMOS circuit and a preparation method thereof, belonging to the technical field of silicon microphones. Background technique [0002] Microphones can convert human voice signals into corresponding electrical signals, and are widely used in mobile phones, computers, telephones, cameras and video cameras, etc. The traditional electret condenser microphone uses Teflon as the vibration film, which cannot withstand the high temperature of nearly 300 degrees in the soldering reflow process of the printed circuit board, so it can only be separated from the assembly of the integrated circuit and assembled by hand alone, which greatly increases the production cost. . [0003] The development of MEMS (Microelectromechanical Systems) technology and process in the past three decades, especially the development of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R1/08H04R31/00
Inventor 缪建民
Owner 华景传感科技(无锡)有限公司
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