Method for preparing high-purity cadmium telluride
A cadmium telluride, high-purity technology, applied in the direction of binary selenium/tellurium compounds, can solve the problems of high cost of powder raw materials, sufficient reaction, difficult sealing, etc., to ensure synthesis rate and purity, avoid direct contact, guarantee The effect of purity
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Embodiment 1
[0049] Embodiment 1 The preparation method of the first high-purity cadmium telluride comprises the following steps:
[0050] 1) Quartz tube coated with carbon
[0051] like image 3 As shown, when the furnace temperature of the deoxidation furnace 6 reaches 800°C, the vent pipe 7 is fixed, and argon gas is introduced at a rate of 0.5 liters per minute, and the acetone 9 starts to bubble, and the acetone vapor is brought into the vent pipe 7. Acetone comes out from the vent tube and is cracked under high temperature conditions. At the same time, move the vent tube or the cleaned quartz tube 3 at a speed of 10cm / 10 seconds, and form a layer of carbon film on the quartz tube wall;
[0052] 2) Raw material handling
[0053] Select cadmium ingots with a particle size smaller than the inner wall of the quartz tube with a purity of 5N;
[0054] Use an agate stick to smash the 5N tellurium raw material in an agate bowl, so that the particle size is within 0.35-10mm for use; sieve ...
Embodiment 2
[0067] Embodiment 2: the preparation method of the second kind of high-purity cadmium telluride, comprises the following steps:
[0068] 1) Quartz tube coated with carbon
[0069] like image 3 As shown, when the furnace temperature of the deoxidation furnace 6 reaches 1100°C, the vent pipe 7 is fixed, and argon gas is introduced at a rate of 0.8 liters per minute, and the acetone 9 starts to bubble, and the acetone vapor is brought into the vent pipe 7. Acetone comes out from the vent pipe and is cracked under high temperature conditions. At the same time, move the vent pipe or the cleaned quartz tube 3 at a speed of 15 cm / 10 seconds to form a layer of carbon film on the quartz tube wall;
[0070] 2) Raw material handling
[0071] Select cadmium ingots with a particle size smaller than the inner wall of the quartz tube with a purity of 5N;
[0072] Use an agate stick to smash the 5N tellurium raw material in an agate bowl, so that the particle size is within 10-20mm for us...
Embodiment 3
[0085] Embodiment 3: the preparation method of the third kind of high-purity cadmium telluride, comprises the following steps:
[0086] 1) Quartz tube coated with carbon
[0087] like image 3 As shown, when the furnace temperature of the deoxidation furnace 6 reaches 900°C, the vent pipe 7 is fixed, and argon gas is introduced at a rate of 1 liter / minute, and the acetone 9 starts to bubble, and the acetone vapor is brought into the vent pipe 7. Acetone comes out from the vent tube and is cracked under high temperature conditions. At the same time, move the vent tube or the cleaned quartz tube 3 at a speed of 20cm / 10 seconds to form a carbon film on the quartz tube wall;
[0088] 2) Raw material handling:
[0089] Select cadmium ingots with a particle size smaller than the inner wall of the quartz tube with a purity of 5N;
[0090] Use an agate rod to crush the 5N tellurium raw material in an agate bowl, so that the particle size is within 0.35-0.5 mm for use; sieve the pow...
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