Film deposition apparatus, film deposition method, semiconductor device fabrication apparatus and susceptor for use in the same

Abstract

The invention provides a film deposition apparatus, a film deposition method, a semiconductor device fabrication apparatus and a susceptor for use in the same. A disclosed semiconductor device fabrication apparatus includes a chamber where a predetermined process is carried out with respect to a substrate; a transfer arm that includes claw portions for supporting a lower peripheral surface portion of the substrate and that moves into and out from the chamber; and a susceptor that includes a substrate receiving portion in which the substrate is placed, and a step portion provided to allow the claw portions to move to a position lower than an upper surface of the substrate receiving portion.

Description

technical field [0001] The present invention relates to a film forming device, a film forming method, a semiconductor manufacturing device, and a susceptor used for the film forming device and the semiconductor manufacturing device. Background technique [0002] In the manufacture of semiconductor devices, various semiconductor manufacturing apparatuses including film forming apparatuses, etching apparatuses, and heat treatment apparatuses are used. In these semiconductor manufacturing apparatuses, a semiconductor substrate (wafer) is placed on a susceptor corresponding to the semiconductor manufacturing apparatus. For example, among the film forming apparatuses, there is a film forming apparatus using a susceptor on which about 2 to 6 wafers are placed on a flat surface. [0003] In such a susceptor, at least three lift pins are provided in a region where a wafer is placed, and the lift pins penetrate the susceptor and move up and down, whereby the wafer is placed on the s...

AI Technical Summary

Problems solved by technology

In addition, if the purge gas flows into the gas phase from the edge of the wafer, the gas flow pattern of the source gas will be disturbed, and as a result, the composition, uniformity of film thickness, and surface waviness of the film deposited on the wafer may be affected. (Morphology) variation

In particular, for example, if the gas flow pattern is disturbed in a molecular layer film formation (also called atomic layer film formation) device, two or more raw material gases may mix in the gas phase, hindering molecular layer film formation.

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