Electrostatic protection structure and manufacturing method thereof
A protection structure, anti-static technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of low resistance of the horizontal triode path, physical damage of the field oxidation area, etc., to avoid physical damage and improve stability.
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0017] The invention discloses an antistatic protection structure, such as image 3 As shown, it includes a P-type substrate 1 and an N-type deep well 2 on it, and a P well is arranged on the N-type deep well 2, and the P well includes a high-voltage P well 3 and a high-voltage P well 3 contained in the high-voltage P well 3. A low-voltage P well 4, the P well and the N-type deep well 2 are provided with a first polysilicon gate 5, the left part of the first polysilicon gate 5 covers the high-voltage P well 3 and the low-voltage P well 4, and the right partly covers the N-type deep well 2, a first N+ diffusion region 6 is arranged on the lower left side of the first polysilicon gate 5, and a P+ diffusion region 7 is also arranged on the left side of the first N+ diffusion region 6, so A first field oxidation region 8 is provided on the left side of the P+ diffusion region 7, a second field oxidation region 9 is separated between the P+ diffusion region 7 and the first N+ diffu...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com