Ion implantation method of semiconductor component

Abstract

The invention discloses an ion implantation method of a semiconductor component. The ion implantation method comprises the following steps of: forming a protection layer on the surface of a polysilicon layer that needs to carry out ion implantation; carrying out the ion implantation on the polysilicon layer with the protection layer; and removing the protection layer after the ion implantation isfinished. By using the ion implantation method, the implanted ions are distributed in the polysilicon layer more evenly, and the punching through phenomenon is avoided, therefore, the better doping effect can be obtained, and the performance of the semiconductor component is improved.

Description

technical field [0001] The invention relates to the manufacturing technology of semiconductor components, in particular to an ion implantation method of semiconductor components. Background technique [0002] In the manufacturing technology of semiconductor components, since the conductivity of silicon in a pure state is very poor, only when a small amount of impurities are added to silicon to change the structure and conductivity of silicon, silicon can become a useful semiconductor. , The above-mentioned process of adding a small amount of impurities to silicon is called doping. Silicon doping technology is the basis for preparing semiconductor components, and ion implantation (Ion Implant) technology is one of the most important doping methods. Since ion implantation technology can repeatedly control the concentration and depth of doped impurities, it has become a standard process to meet the requirements of sub-0.25 micron feature size and large-diameter silicon wafer p...

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Problems solved by technology

When ion implantation is performed, the implanted ions enter a deep position in the above-mentioned polysilicon layer due to the above-mentioned channel effect, and even penetrate the gate under the polysilicon layer, and a punch-through phenomenon occurs, so that the Source (Source) ) and the channel between the drain (Drain) is short-circuited, so that the gate cannot effectively control the conduction of the channel between the source and the drain, resulting in the failure of semiconductor components

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