Gas path device for metal organic chemical vapor deposition equipment

Abstract

The invention discloses a gas path device for metal organic chemical vapor deposition (MOCVD) equipment. The gas path device comprises a gas inlet and a plurality of groups of gas paths which are led out from the gas inlet and arranged in parallel, wherein each group of gas paths comprises a first sub gas path and a second sub gas path arranged in parallel, and each of the first sub gas path and the second sub gas path can be selectively communicated with a growth chamber and communicated with an emptying passage; when the gas passes through one group of air paths, the gas selectively flows through one of the first sub gas path and the second sub gas path in the group of air paths; and the first sub gas path is provided with a first flow meter, the second sub gas path is provided with a second flow meter, and the maximum measuring range of the first flow meter is greater than that of the second flow meter. The gas path device realizes precise control of the gas from large flow to small flow in the MOCVD equipment through the large measuring range flow meter and the small measuring range flow meter and the corresponding design of gas path switching so as to realize high-quality epitaxial growth of materials under different process conditions.

Description

technical field [0001] The invention relates to the technical field of semiconductor equipment manufacturing, in particular to a gas circuit device for metal organic chemical deposition equipment. Background technique [0002] MOCVD (Metal Organic Chemical Vapor Deposition) equipment, that is, Metal Organic Chemical Vapor Deposition equipment, is the key equipment for the research and production of compound semiconductor epitaxial materials, especially suitable for large-scale industrial production of compound semiconductor functional structural materials, and cannot be replaced by other semiconductor equipment The core semiconductor equipment is the main means of producing semiconductor optoelectronic devices and microwave device materials in the world today, and is an indispensable strategic high-tech semiconductor equipment for the development of today's information industry and national defense high-tech breakthroughs. [0003] To grow thin film materials with metal orga...

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Problems solved by technology

Therefore, if the selected mass flow meter range is too large, it is difficult to achieve precise control of the gas flow, especially in the case of small flow, the control error will be large, which will affect the quality of the final crystal

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