Phase change storage

Abstract

The invention discloses a phase change storage, which comprises a shunt switching circuit, a phase change storage unit, a position selection switch, a pulse generation module and a counting module, wherein the shunt switching circuit comprises a plurality of switches and is used for coupling a plurality of shut paths to the output end of a reference current power; the position selection switch is responsible for conducting the phase change storage unit with the output end of the reference current power; the pulse generation module is responsible for outputting a pulse signal; the counting module is used for counting pulse of the pulse signal during enabling; and counting results are a group of digital signals coupled with the shunt switching circuit for controlling the switches.

Description

technical field The present invention relates to a phase change memory (Phase Change Memory, PCM). Background technique Phase change material (Phase Change Material) includes two phase states: one is crystalline phase (crystalline) and the other is amorphous phase (amorphous). Emerging memory - phase change memory (PCM) - uses phase change material as a storage unit (hereinafter referred to as phase change storage unit), with its crystalline phase state carrying a bit value of '0' and its amorphous phase state representing a bit value of '1' . According to the action current flowing therethrough, the phase change memory unit switches between the crystal phase and the amorphous phase. The following table compares the action current characteristics of the crystalline phase and the amorphous phase: Among them, the crystal phase transition is the most difficult to control. Improper applied current will make the phase-change storage unit crystallize incompletely and cannot ...

AI Technical Summary

Problems solved by technology

Improper application of current will make the phase change storage unit incompletely crystallized and unable to completely transform into a crystalline phase

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