Manufacturing method of low-temperature polysilicon thin film material based on annealing process

A low-temperature polysilicon and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of uncontrollable induced metal diffusion, induced metal residue, and long crystallization time, so as to reduce metal residue and improve Effect of grain size and shortening time

Inactive Publication Date: 2012-02-29
GUANGDONG SINODISPLAY TECH
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Problems solved by technology

[0004] Among the known metal-induced crystallization film manufacturing technologies, the lateral metal-induced crystallization film technology obtains the best material and device performance, while the metal-induced crystallization film In order for the manufacturing technology to be practical, the following problems need to be solved urgently: 1. High concentration of induced metal residues; 2. Unable to control the diffusion of induced metals; 3. Long crystallization time

Method used

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  • Manufacturing method of low-temperature polysilicon thin film material based on annealing process
  • Manufacturing method of low-temperature polysilicon thin film material based on annealing process
  • Manufacturing method of low-temperature polysilicon thin film material based on annealing process

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example 6

[0063] According to an example of the present invention (taking Example 6 as an example), the method for preparing polysilicon thin film material comprises the following steps:

[0064] (1) select the glass substrate, adopt the PECVD method to deposit 1.0 micron low-temperature silicon oxide on the glass substrate as the barrier layer;

[0065] (2) Etching the barrier layer into a groove-shaped structure, wherein the protrusions have a rectangular cross-section, a width of 3 nanometers, a height of 3 nanometers (D=3.0nm), and a protrusion spacing of 60 microns;

[0066] (3) A layer of controllable nickel source is formed on the first isolation layer by sputtering as a metal induction layer, and the surface nickel concentration is 5×10 13 cm -2 ;

[0067] (4) Depositing a layer of barrier layer on the induction layer by PECVD method as the second barrier layer, the thickness of the second barrier layer corresponding to the protrusion of the first barrier layer is 1.5 nanomete...

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Abstract

The invention provides a manufacturing method of a low-temperature polysilicon thin film material based on an annealing process. The manufacturing method is characterized by comprising the following steps of: (1) selecting a substrate and forming a first resistance layer with a groove on the substrate; (2) sequentially forming a metal induction layer, a second resistance layer and an amorphous silicon layer on the first resistance layer; (3) carrying out first annealing treatment on a product obtained in the step (2) to obtain a partially-crystallized thin film; (3) forming a metal adsorptionlayer on the partially-crystallized thin film; (5) carrying out secondary annealing treatment on the product obtained in the step (2); and (6) removing the metal adsorption layer subjected to the secondary annealing treatment. By adopting the method, the crystallite size can be increased and the dispersion of induced metal to the amorphous silicon layer is effectively controlled.

Description

technical field [0001] The invention belongs to the display field, and in particular relates to a method for manufacturing an active matrix display based on a low-temperature polysilicon thin film material based on an annealing process. Background technique [0002] At present, there are roughly two types of thin film transistor (TFT) technologies used in active matrix display devices: amorphous silicon thin film TFT and polysilicon thin film TFT. The amorphous silicon thin film TFT process is mature and relatively simple, with high yield and low cost. The characteristics of TFT are mainly evaluated by the value of electron mobility. The electron mobility of amorphous silicon thin film TFT is about 1cm2 / Vs and the stability of amorphous silicon devices is poor, which makes it difficult to meet the fast switching color sequential liquid crystal display, current-driven organic light-emitting diode display and other integrated display requirements. The electron mobility of po...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/20
Inventor 彭俊华黄飚黄宇华
Owner GUANGDONG SINODISPLAY TECH
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