Continuous vertical hot evaporation metal film coating method

A metal coating and thermal evaporation technology, which is applied in vacuum evaporation coating, metal material coating process, sputtering coating, etc., can solve the problems of metal wire grid polarization failure and other problems

Inactive Publication Date: 2010-09-29
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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Problems solved by technology

Due to the non-vertical deposition of metal molecules, metal film deposition 202 is formed on the sidewall of the relief structure 201 on the surface of the substrate, causing the up

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  • Continuous vertical hot evaporation metal film coating method
  • Continuous vertical hot evaporation metal film coating method
  • Continuous vertical hot evaporation metal film coating method

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[0019] In order to avoid the phenomenon that the upper surface of the relief structure and the metal film at the bottom of the opening are connected to each other in the metal wire grid manufacturing process in the prior art, which affects the filtering of the polarization component of the incident light, a continuous vertical thermal evaporation method is proposed. Metal coating method.

[0020] From the perspective of the process of the traditional coating method: conventionally, a point evaporation source is used for bottom-up metal film evaporation on a small-area sample substrate, which can obtain a deposited film thickness with better uniformity and directionality. However, for large-area samples, the farther the sample surface is from the central area above the thermal evaporation source, the worse the thickness uniformity and deposition directionality of the metal film become. The reason is: the divergent metal molecule jet direction is very easy to deposit on the inner s...

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Abstract

The invention discloses a novel continuous vertical hot evaporation metal film coating method. Metal film materials are coated on samples above a hot evaporation source in a vapor deposition way through a hot evaporation source at the bottom. The invention is characterized in that a slit type straightening device is arranged between the hot evaporation source and a sample conveying mechanism, divergent metal molecules sent from the hot evaporation source are filtered, and metal molecule flows vertically facing substrate materials of samples are formed, wherein the depth-to-width ratio of the slit of the straightening device is smaller than a half of the depth-to-width ratio of a surface relief sculpture structure of the substrate materials of the samples. In the application and the implementation of the invention, only the metal molecules flying approximately in the vertical direction are allowed to be deposited on the surface of substrate materials, so the invention is favorable for reducing or eliminating the side wall deposition of the surface relief sculpture structure on substrate materials, avoids the interconnection of the top of the relief sculpture structure and metal films at the bottom, and enhances double-layer metal wire grating structures required by the metal wire grating formation polarization technology.

Description

technical field [0001] The invention relates to a method for metal coating, in particular to a method for limiting the flight direction of metal molecules for realizing continuous vertical thermal evaporation metal coating on the surface of a large-area base material. The method is aimed at the metal coating application of the relief structure on the surface of the base material, and can solve the problem of interconnection between the top layer of the relief structure and the bottom metal coating film. Background technique [0002] The metal wire grid polarization technology uses the double-layer metal wire grid structure on the surface to filter the polarization component of the incident light. The manufacturing method of the double-layer metal wire grid is as follows: firstly, a relief structure in the form of a wire grid is formed on the surface of the base material by a micro-nano processing method, the width of the wire grid is in the order of microns or less, and then...

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Application Information

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IPC IPC(8): C23C14/22C23C14/24C23C14/56C23C14/14G02B5/30
Inventor 崔铮
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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