The present invention relates to the field of
semiconductor manufacturing, and discloses a
capacitor structure and a preparation method thereof. A preparation method of a
capacitor structure comprises: depositing a first supporting layer, a first sacrificial layer, and a second supporting layer on a substrate in sequence; forming a heterogeneous region in the second supporting layer; depositing a second sacrificial layer and a third supporting layer on the second supporting layer in sequence;
etching in sequence from the third supporting layer to the substrate to form a
capacitor hole through an
etching process, and the capacitor hole penetrates the heterogeneous region, wherein the
etching selectivity ratio of the material in the heterogeneous region to the material in the second supporting layer is greater than 1; and forming a lower
electrode layer on the inner surface of the capacitor hole. In the process of etching in sequence from the third supporting layer to the substrate, if the etching direction is deflected to a certain extent, due to the existence of the heterogeneous region, the heterogeneous region will be etched preferentially, that is, the etching starting point of the
lower half is corrected by the heterogeneous region, and the etching direction can be corrected to a certain extent, thereby avoiding the problem of adjacent capacitor holes being interconnected due to the excessive deflection of the capacitor holes in the
lower half.